| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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171,000 pcs
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171000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDV045P20L is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for low-voltage switching applications with a maximum drain-source voltage of 20V and continuous drain current of 1.15A (at Ta). The device features a low on-resistance of 108mOhm max at 4.5V gate drive, with a gate threshold voltage of 1.5V max. It is housed in a compact SOT23-3 surface-mount package, suitable for space-constrained designs. The MOSFET operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 1.6W at Ta. Input capacitance is 1220pF at Vds=10V, and gate charge is 10nC at Vgs=4.5V. The drive voltage range is 1.8V to 4.5V for optimal Rds(on).
The maximum drain-source voltage is 20 V.
The continuous drain current is 1.15 A at Ta.
The maximum on-resistance is 108 mOhm at Id = 1.15 A and Vgs = 4.5 V.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface-mount SOT23-3 package (also TO-236-3, SC-59).
RoHS status is listed as compliant (RoHS3), but this is unverified.
The maximum gate threshold voltage is 1.5 V at Id = 250 µA.