FDU6N25 FDU6N25 is an N-channel MOSFET from On Semiconductor with a 250V drain-source voltage rating and 4.4A drain current rating. It is a through-hole device in a TO-251-3 (I-PAK) package.
Mfr Part #:

FDU6N25

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDU6N25 is an N-channel MOSFET from On Semiconductor with a 250V drain-source voltage rating and 4.4A drain current rating. It is a through-hole device in a TO-251-3 (I-PAK) package.
✓ Total Stock: 30,757 pcs
$ Price Range: $0.16

FDU6N25 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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FDU6N25 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDU6N25 Description

Short technical summary and product information.

FDU6N25 is an N-channel MOSFET from ON Semiconductor rated for a maximum drain-to-source voltage of 250 V and a continuous drain current of 4.4 A at case temperature. The transistor is packaged in a TO-251-3 stub lead (I-PAK) package with through-hole mounting, making it suitable for insertion in printed circuit boards.

 

Electrical characteristics include a maximum drain-source on-resistance of 1.1 Ω at a gate drive of 10 V and drain current of 2.2 A, a gate threshold voltage of up to 5 V at 250 µA, and a gate-source voltage range of ±30 V. Input capacitance is 250 pF at 25 V drain-source voltage, and total gate charge is 6 nC at 10 V gate-source. These parameters provide a baseline for estimating switching losses and drive requirements.

 

The device operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 50 W at case temperature. The product record lists RoHS3 compliance, REACH unaffected, and moisture sensitivity level 1. The through-hole I-PAK package is appropriate for prototyping and conventional assembly processes.

FDU6N25 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel MOSFET, 250V, 4.4A, I-PAK
Subcategory: Single N-Channel MOSFET

FDU6N25 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDU6N25 Estimated Pricing

Qty Low High
4,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDU6N25 Features

  • N-Channel MOSFET with 250V drain-source voltage.
  • 4.4A continuous drain current at case temp.
  • Maximum 1.1Ω on-resistance at 10V drive.
  • Through-hole I-PAK (TO-251-3) package.
  • Operating junction temperature range -55°C to 150°C.

FDU6N25 Applications

  • Use for low-side switching in high-voltage circuits.
  • Suitable for through-hole power-switching PCBs.
  • Can switch loads in DC-DC converter stages.

FDU6N25 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDU6N25?

The FDU6N25 has a maximum drain-to-source voltage (Vdss) of 250V.

What package type and mounting style does the FDU6N25 use?

The FDU6N25 comes in a TO-251-3 Stub Leads (I-PAK) package and is mounted through hole. The supplier device package is I-PAK.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDU6N25 RoHS compliant?

The product data lists the FDU6N25 as RoHS3 Compliant, but this compliance status is unverified in the available data.

What is the continuous drain current rating?

The continuous drain current is rated at 4.4A at case temperature (Tc).

What is the maximum on-resistance of the FDU6N25?

The maximum drain-source on-resistance is 1.1Ω at Vgs=10V and Id=2.2A.

What are the gate charge and input capacitance?

The total gate charge is 6nC at Vgs=10V, and the input capacitance is 250pF at Vds=25V.

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