| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,800 pcs
|
19800 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDU6612A is a 30V N-Channel PowerTrench MOSFET designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It features low gate charge, fast switching speed, and extremely low RDS(ON) in a compact I-PAK (TO-251AA) through-hole package.
Key electrical specifications include a drain-source voltage rating of 30V, continuous drain current of 30A at case temperature 25°C (9.5A at ambient), and pulsed drain current up to 60A. The on-resistance is typically 15mΩ at VGS=10V (max 20mΩ) and 20mΩ at VGS=4.5V (max 28mΩ). Gate charge is typically 6.7nC, and input capacitance is 660pF, enabling efficient high-frequency switching.
The device is optimized for applications such as DC/DC converters and motor drives. It is available in a through-hole I-PAK package with short leads, supplied in tubes of 75 units. A surface-mount D-PAK variant (FDD6612A) is also available.
| Qty | Low | High |
|---|---|---|
| 606+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) is 30 V.
The FDU6612A is available in a through-hole I-PAK package (TO-251AA) with short leads.
The operating junction temperature range is -55°C to 175°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be treated as low confidence.
The typical gate charge (Qg) is 6.7 nC at VGS=5V.
The typical on-resistance is 15 mΩ, with a maximum of 20 mΩ at VGS=10V and ID=9.5A.
Typical turn-on delay is 9 ns, rise time 5 ns, turn-off delay 24 ns, and fall time 4 ns under test conditions VDD=15V, ID=1A, VGS=10V, RGEN=6Ω.