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FDU5N50NZTU N-Channel power MOSFET with 500V drain-source voltage and 4A continuous drain current. Features low on-resistance and gate charge in a DPAK3 through-hole package.
Mfr Part #:

FDU5N50NZTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET with 500V drain-source voltage and 4A continuous drain current. Features low on-resistance and gate charge in a DPAK3 through-hole package.
✓ Total Stock: 5,040 pcs

FDU5N50NZTU Available from 1 distributor

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FDU5N50NZTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDU5N50NZTU Description

Short technical summary and product information.

The FDU5N50NZTU is an N-Channel power MOSFET from ON Semiconductor's UniFET II family, designed for high-voltage switching applications. It features a drain-to-source voltage rating of 500V and a continuous drain current of 4A at 25°C case temperature, with a maximum on-resistance of 1.5 Ohm at 10V gate drive.

 

This MOSFET offers low gate charge (typical 9 nC) and low reverse transfer capacitance (typical 4 pF), enabling efficient switching performance. It is 100% avalanche tested with a single pulse avalanche energy rating of 304 mJ, and provides improved dv/dt capability for robust operation in demanding environments.

 

The device is housed in a TO-251-3 (IPAK) through-hole package, also referred to as DPAK3, and is supplied in tubes. It is Pb-Free and RoHS compliant, suitable for power converter designs including PFC, flat panel display power, ATX supplies, and electronic lamp ballasts.

FDU5N50NZTU Quick Information

Product Type: Power MOSFET
Canonical Name: FDU5N50NZTU N-Channel Power MOSFET
Subcategory: Single MOSFET

FDU5N50NZTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDU5N50NZTU Features

  • 500V drain-to-source voltage rating.
  • 4A continuous drain current at 25°C.
  • Low on-resistance of 1.5 Ohm maximum.
  • Low gate charge of 9 nC typical.
  • 100% avalanche tested for reliability.

FDU5N50NZTU Applications

  • Used in power factor correction circuits.
  • Suitable for LCD and LED TV power supplies.
  • Ideal for ATX power supply designs.
  • Used in electronic lamp ballasts.
  • Applicable in charger and adapter circuits.

FDU5N50NZTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FDU5N50NZTU?

The drain-to-source voltage rating is 500 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 4 A at Tc = 25°C, and 2.4 A at Tc = 100°C.

What is the on-resistance of this MOSFET?

The maximum drain-to-source on-resistance is 1.5 Ohm at Vgs = 10 V and Id = 2 A, with a typical value of 1.38 Ohm.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the FDU5N50NZTU available in?

It is available in a TO-251-3 (IPAK) through-hole package, also known as DPAK3.

Is the FDU5N50NZTU RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free as stated in the datasheet.

What is the gate charge of this MOSFET?

The typical gate charge is 9 nC, with a maximum of 12 nC at Vgs = 10 V.

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