FDU3N40TU FDU3N40TU is an N-Channel MOSFET from On Semiconductor with a maximum drain-source voltage of 400V and a continuous drain current of 2A. It is housed in a through-hole IPAK package.
Mfr Part #:

FDU3N40TU

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDU3N40TU is an N-Channel MOSFET from On Semiconductor with a maximum drain-source voltage of 400V and a continuous drain current of 2A. It is housed in a through-hole IPAK package.
✓ Total Stock: 19,799 pcs
$ Price Range: $0.15

FDU3N40TU Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
14,797 pcs
14797 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 09+ On Request On Request
Non-Authorised Inventory information
2 pcs
2 pcs On Request 1 On Request On Request NO DC On Request On Request

FDU3N40TU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDU3N40TU Description

Short technical summary and product information.

The FDU3N40TU is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications with a maximum drain-to-source voltage of 400V and a continuous drain current rating of 2A at case temperature.

 

This device features a maximum on-resistance of 3.4 Ohms at a gate drive of 10V and a drain current of 1A. The gate threshold voltage is a maximum of 5V at 250µA drain current. The total gate charge is 6 nC at 10V, and the input capacitance is 225 pF at 25V drain-source bias.

 

The FDU3N40TU is offered in a through-hole TO-251-3 (IPAK) package, suitable for automated insertion and manual assembly. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 30W at case temperature.

FDU3N40TU Quick Information

Product Type: MOSFET
Canonical Name: FDU3N40TU N-Channel MOSFET 400V 2A IPAK
Subcategory: Single N-Channel

FDU3N40TU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDU3N40TU Estimated Pricing

Qty Low High
5,040+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDU3N40TU Features

  • N-Channel MOSFET with 400V drain-source voltage.
  • Continuous drain current rating of 2A.
  • Maximum on-resistance of 3.4 Ohms at 10V gate drive.
  • Through-hole IPAK package for easy mounting.
  • RoHS3 compliant and MSL 1 unlimited.

FDU3N40TU Applications

  • Ideal for high-voltage DC-DC converter circuits.
  • Used in power supply switching stages.
  • Suitable for motor control and drive applications.
  • Applicable in lighting and inverter systems.

FDU3N40TU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDU3N40TU?

The maximum drain-source voltage is 400V.

What is the continuous drain current rating of the FDU3N40TU?

The continuous drain current is 2A at case temperature.

What is the operating temperature range of the FDU3N40TU?

The operating junction temperature range is -55°C to 150°C.

What is the package type of the FDU3N40TU?

The FDU3N40TU is available in a through-hole TO-251-3 (IPAK) package.

Is the FDU3N40TU RoHS compliant?

Yes, the FDU3N40TU is listed as RoHS3 compliant.

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