FDT86246L N-Channel MOSFET with 150V drain-source voltage and 2A continuous current. Features low on-resistance of 228mOhm at 10V gate drive.
Mfr Part #:

FDT86246L

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 150V drain-source voltage and 2A continuous current. Features low on-resistance of 228mOhm at 10V gate drive.
✓ Total Stock: 18,363 pcs
$ Price Range: $0.37 - $1.67

FDT86246L Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDT86246L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDT86246L Description

Short technical summary and product information.

The FDT86246L is an N-Channel MOSFET produced using onsemi's advanced POWERTRENCH process. It is rated for a maximum drain-source voltage of 150V and continuous drain current of 2A at 25°C ambient (pulsed current up to 20A). The device features low on-resistance: 228mOhm maximum at VGS=10V and ID=2A, and 280mOhm maximum at VGS=4.5V and ID=1.8A.

 

With a gate charge of 6.3nC and input capacitance of 335pF, this MOSFET is designed for fast switching and efficient operation. It is avalanche rated with a single pulse energy capability of 6mJ. Power dissipation depends on mounting: 1W on a minimum copper pad, or 2.2W on a 1 square inch pad of 2oz copper.

 

The device is offered in a surface mount SOT-223-4 package (TO-261-4/TO-261AA), and is available in tape and reel packaging with a standard quantity of 4000 pieces per reel. It is RoHS3 compliant and Pb-Free.

 

Typical applications include load switching, primary side switching, and buck/boost converters.

FDT86246L Quick Information

Product Type: MOSFET (Metal Oxide)
Canonical Name: N-Channel MOSFET, 150V, 2A, SOT-223-4
Subcategory: Power MOSFET

FDT86246L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant

FDT86246L Estimated Pricing

Qty Low High
1+ $1.67 $1.67
10+ $1.05 $1.05
50+ $0.79 $0.79
100+ $0.70 $0.70
500+ $0.55 $0.55
4,000+ $0.39 $0.39
8,000+ $0.37 $0.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDT86246L Features

  • N-Channel MOSFET with 150V drain-source voltage.
  • Continuous drain current rated at 2A.
  • Low on-resistance: 228mOhm at 10V gate drive.
  • Fast switching with 6.3nC gate charge.
  • RoHS3 compliant and Pb-Free package.

FDT86246L Applications

  • Used in load switch applications.
  • Suitable for primary side switching.
  • Ideal for buck and boost converters.

FDT86246L FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDT86246L?

Maximum drain-source voltage is 150V.

What is the package type of the FDT86246L?

Surface mount SOT-223-4 (TO-261-4/TO-261AA).

What is the operating temperature range?

Operating junction temperature range is -55°C to 150°C.

Is the FDT86246L RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free as per manufacturer datasheet.

What gate drive voltages are supported?

Recommended gate drive voltages are 4.5V and 10V, with minimum on-resistance at 10V.

Home
Account

Categories