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FDT86113LZ N-Channel PowerTrench MOSFET with 100V drain-source voltage, 3.3A continuous drain current, and low on-resistance of 100 mOhm at 10V gate drive.
Mfr Part #:

FDT86113LZ

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel PowerTrench MOSFET with 100V drain-source voltage, 3.3A continuous drain current, and low on-resistance of 100 mOhm at 10V gate drive.
✓ Total Stock: 200,000 pcs
$ Price Range: $0.38 - $1.69

FDT86113LZ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
200,000 pcs
On Request
200000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDT86113LZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDT86113LZ Description

Short technical summary and product information.

The FDT86113LZ is an N-Channel PowerTrench MOSFET from On Semiconductor, designed for efficient power switching. It features a drain-source voltage rating of 100V and a continuous drain current of 3.3A. The device offers a low on-resistance of typically 75 mOhm at 10V gate drive, with a maximum of 100 mOhm. It also provides a gate threshold voltage range of 1.0V to 2.5V, enabling logic-level drive capability.

 

The MOSFET is built with advanced trench technology to minimize conduction losses while maintaining fast switching performance. It includes built-in ESD protection exceeding 3 kV (HBM). The device is suitable for DC-DC converters, load switching, and general power management applications.

 

Packaged in a surface-mount SOT-223-4 (TO-261-4) package, the FDT86113LZ is Pb-free and Halide-free, complying with environmental standards. The operating junction temperature range is -55°C to 150°C, with a power dissipation of 2.2W at 25°C ambient.

FDT86113LZ Quick Information

Product Type: N-Channel MOSFET
Canonical Name: On Semiconductor FDT86113LZ N-Channel PowerTrench MOSFET, 100V, 3.3A, SOT-223-4
Subcategory: N-Channel

FDT86113LZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDT86113LZ Estimated Pricing

Qty Low High
1+ $1.69 $1.69
10+ $1.07 $1.07
50+ $0.80 $0.80
100+ $0.72 $0.72
500+ $0.56 $0.56
4,000+ $0.40 $0.40
8,000+ $0.38 $0.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDT86113LZ Features

  • N-Channel PowerTrench MOSFET.
  • 100V drain-source voltage rating.
  • 3.3A continuous drain current.
  • Low on-resistance: 100 mOhm max.
  • ESD protection >3 kV HBM.

FDT86113LZ Applications

  • DC-DC switch applications.
  • Power management circuits.
  • Load switching.
  • General purpose switching.

FDT86113LZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V

What is the package type?

SOT-223-4 (TO-261-4, TO-261AA)

What is the operating temperature range?

-55°C to 150°C (junction)

Is the device RoHS compliant?

RoHS3 Compliant (unverified, low confidence)

What is the gate threshold voltage?

1.0V to 2.5V (typical 1.7V) at 250µA

What is the maximum gate-source voltage?

±20V

What is the typical on-resistance?

75 mOhm typical at 10V gate drive, 100 mOhm max

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