| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,624 pcs
|
1624 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDT86102LZ is an N-Channel enhancement-mode MOSFET manufactured using onsemi's advanced PowerTrench process. This process is tailored to minimize on-state resistance and switching losses, making the device suitable for DC-DC conversion, inverter, and synchronous rectifier applications.
Key electrical specifications include a minimum drain-source breakdown voltage of 100V, continuous drain current rating of 6.6A at 25°C, and pulsed drain current capability of 40A. The device offers low on-resistance: 28mΩ typical (28mΩ maximum) at VGS=10V and ID=6.6A, and 27mΩ typical (38mΩ maximum) at VGS=4.5V and ID=5.5A. Gate threshold voltage ranges from 1.0V minimum to 3.0V maximum with a typical value of 1.4V.
The MOSFET includes a gate-to-source Zener diode for enhanced ESD protection, with HBM ESD protection level greater than 6kV typical. It also features low gate charge (25nC maximum at VGS=10V) and fast switching speed. The device is 100% UIL tested and is Pb-Free, Halide Free, and RoHS compliant.
Packaged in a surface-mount SOT-223-4 (TO-261AA) package, the FDT86102LZ has a maximum power dissipation of 2.2W at 25°C ambient (note 1a) and operates over a junction temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.60 | $1.60 |
| 10+ | $1.01 | $1.01 |
| 50+ | $0.75 | $0.75 |
| 100+ | $0.67 | $0.67 |
| 500+ | $0.53 | $0.53 |
| 4,000+ | $0.37 | $0.37 |
| 8,000+ | $0.35 | $0.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 100V.
The continuous drain current is 6.6A at TA=25°C.
The maximum on-resistance is 28mΩ at VGS=10V and ID=6.6A, and 38mΩ at VGS=4.5V and ID=5.5A.
It is available in a surface-mount SOT-223-4 (TO-261AA) package.
The operating junction temperature range is -55°C to +150°C.
Yes, the device is Pb-Free, Halide Free, and RoHS compliant per the datasheet.
The gate threshold voltage ranges from 1.0V minimum to 3.0V maximum, with a typical value of 1.4V at VDS=VGS and ID=250µA.