Mfr Part #:

FDT55AN06LA0

N-Channel PowerTrench MOSFET rated for 60V drain-source voltage and 12.1A continuous drain current. Features low on-resistance of 46 mΩ max at 10V gate drive.

✓ Total Stock: 5,924 pcs

FDT55AN06LA0 Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	5,924 pcs On Request	5924 pcs	On Request	1	On Request	On Request	09+	On Request	On Request

FDT55AN06LA0 Description

Short technical summary and product information.

The FDT55AN06LA0 is an N-Channel PowerTrench MOSFET from ON Semiconductor, designed for efficient power switching in a compact SOT-223 surface-mount package. It is rated for a maximum drain-source voltage of 60V and a continuous drain current of 12.1A at 25°C with 10V gate drive. The device features a typical on-resistance of 36 mΩ (46 mΩ max) at VGS=10V and ID=11A, and 44 mΩ (55 mΩ max) at VGS=5V, enabling low conduction losses.

Key electrical characteristics include a gate threshold voltage range of 1V to 3V, total gate charge of 7.6 nC typical (10 nC max), and input capacitance of 849 pF typical (1130 pF max). Switching times are fast with typical turn-on delay of 10 ns and rise time of 24 ns. The device also offers avalanche energy capability of 34 mJ and a body diode with low reverse recovery charge.

The MOSFET is suitable for applications such as motor/body load control, power train management, DC-AC converters, and distributed power architectures. It operates over a junction temperature range of -55°C to +150°C and is RoHS compliant.

FDT55AN06LA0 Quick Information

Product Type: N-Channel MOSFET

Canonical Name: FDT55AN06LA0 N-Channel PowerTrench MOSFET

Subcategory: N-Channel MOSFET

FDT55AN06LA0 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1

REACH Status: Compliant

FDT55AN06LA0 Features

N-Channel PowerTrench MOSFET technology.
Rated for 60V drain-source voltage.
Continuous drain current up to 12.1A.
Low on-resistance of 46 mΩ max at 10V.
SOT-223 surface mount package.

FDT55AN06LA0 Applications

Motor and body load control.
Power train management.
DC-AC converters.
Distributed power architectures.
VRM applications.

FDT55AN06LA0 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the FDT55AN06LA0?

The maximum drain-source voltage (Vdss) is 60V.

What package does the FDT55AN06LA0 come in?

The FDT55AN06LA0 is available in a SOT-223 surface mount package.

What is the operating temperature range of the FDT55AN06LA0?

The operating junction temperature range is -55°C to +150°C.

Is the FDT55AN06LA0 RoHS compliant?

Yes, the FDT55AN06LA0 is RoHS compliant as stated in the datasheet.

What is the typical gate threshold voltage of the FDT55AN06LA0?

The gate threshold voltage (Vgs(th)) is typically 1V minimum and 3V maximum at ID=250µA.

What is the maximum on-resistance at VGS=10V?

The maximum on-resistance (Rds(on)) at VGS=10V and ID=11A is 46 mΩ.

What is the typical total gate charge of the FDT55AN06LA0?

The typical total gate charge (Qg) is 7.6 nC at VDS=30V, ID=11A, VGS=0V to 5V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	12.1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.6 nC (typ) / 10 nC (max)
Input Capacitance (Ciss) (Max) @ Vds	849 pF (typ) / 1130 pF (max)
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	8.9 W
Rds On (Max) @ Id, Vgs	36 mΩ (typ) / 46 mΩ (max)
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	1 V (min) / 3 V (max)