FDT457N N-Channel enhancement mode MOSFET with 30V drain-source voltage and 5A continuous drain current. Features low on-resistance of 60mOhm at 10V gate drive and is housed in a SOT-223 surface mount package.
Mfr Part #:

FDT457N

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel enhancement mode MOSFET with 30V drain-source voltage and 5A continuous drain current. Features low on-resistance of 60mOhm at 10V gate drive and is housed in a SOT-223 surface mount package.
✓ Total Stock: 11,139 pcs
$ Price Range: $0.27 - $1.32

FDT457N Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDT457N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDT457N Description

Short technical summary and product information.

The FDT457N is an N-Channel enhancement mode power MOSFET produced using onsemi's proprietary DMOS technology. This high cell density process minimizes on-state resistance and provides superior switching performance, making it well suited for low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

 

Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 5A at 25°C ambient (16A pulsed), and drain-source on-resistance of 60mOhm at 10V gate drive (90mOhm at 4.5V). Gate threshold voltage ranges from 1V to 3V, gate charge is 5.9nC, and input capacitance is 235pF. The device can dissipate up to 3W at 25°C ambient with a junction-to-ambient thermal resistance of 42°C/W.

 

The FDT457N is housed in a SOT-223 surface mount package (TO-261-4) with gull wing leads. It is Pb-Free and operates over a junction temperature range of -65°C to 150°C. The device is supplied in tape and reel packaging with 4000 units per reel.

FDT457N Quick Information

Product Type: MOSFET (Metal Oxide)
Canonical Name: FDT457N N-Channel MOSFET, 30V, 5A, SOT-223
Subcategory: N-Channel MOSFET

FDT457N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDT457N Estimated Pricing

Qty Low High
1+ $1.32 $1.32
10+ $0.83 $0.83
50+ $0.61 $0.61
100+ $0.54 $0.54
500+ $0.42 $0.42
4,000+ $0.29 $0.29
8,000+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDT457N Features

  • N-Channel enhancement mode MOSFET.
  • 30V drain-source voltage rating.
  • 5A continuous drain current.
  • Low on-resistance: 60mOhm at 10V.
  • Surface mount SOT-223 package.

FDT457N Applications

  • Notebook computer power management.
  • Battery powered circuits.
  • DC motor control.
  • Low voltage power switching.

FDT457N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V maximum.

What is the package type?

SOT-223 (TO-261-4) surface mount package.

What is the operating temperature range?

-65°C to 150°C (junction temperature).

Is the device lead-free?

Yes, the datasheet confirms it is Pb-Free.

What is the continuous drain current?

5A at 25°C ambient.

What is the on-resistance?

60mOhm at 10V gate drive, 90mOhm at 4.5V gate drive.

What is the gate threshold voltage?

1V typical, 3V maximum at 250µA.

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