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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
164,364 pcs
|
164364 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
22,286 pcs
|
22286 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (EAS) | |
| Breakdown Voltage Temperature Coefficient | |
| Current | |
| Drain Source On Resistance (Maximum @ Vgs=6 V, Id=3.7 A) | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Finish | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Pulsed Drain Current (Idm) | |
| Rds On (Max) @ Id, Vgs | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero-Gate-Voltage Drain Current (IDSS) |
The FDT3612 is an N-Channel PowerTrench MOSFET designed by On Semiconductor for efficient DC/DC converter applications. It is rated for a drain-source voltage of 100V and a continuous drain current of 3.7A at 25°C ambient temperature. The device offers a maximum on-resistance of 120mOhm at a 10V gate drive and 130mOhm at 6V, enabling low conduction losses. With a typical gate charge of 14nC, the FDT3612 supports fast switching speeds, making it suitable for high-frequency power management circuits.
The MOSFET is packaged in a Pb-free SOT-223-4 surface-mount package (TO-261-4), which provides good thermal performance with a junction-to-ambient thermal resistance of 42°C/W. It is capable of handling pulsed drain currents up to 20A and has an avalanche energy rating of 90mJ. The device operates over a junction temperature range of -55°C to 150°C.
Applications include DC/DC converters and power management in various electronic systems. The low gate charge and fast switching characteristics make it ideal for synchronous and conventional PWM controller designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
| 10+ | $0.79 | $0.79 |
| 50+ | $0.59 | $0.59 |
| 100+ | $0.52 | $0.52 |
| 500+ | $0.40 | $0.40 |
| 4,000+ | $0.28 | $0.28 |
| 8,000+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
SOT-223-4 (TO-261-4).
-55°C to 150°C (junction).
The device is Pb-free, but RoHS3 compliance is unverified (low confidence).
3.7A at 25°C ambient temperature.
120mOhm maximum.