FDT1600N10ALZ N-Channel MOSFET with 100V drain-source voltage and 5.6A continuous current rating. Offered in a surface-mount SOT-223-4 package.
Mfr Part #:

FDT1600N10ALZ

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 100V drain-source voltage and 5.6A continuous current rating. Offered in a surface-mount SOT-223-4 package.
✓ Total Stock: 1,699 pcs
$ Price Range: $0.28 - $1.38

FDT1600N10ALZ Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,589 pcs
1589 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
110 pcs
110 pcs On Request 1 On Request On Request 1806 On Request On Request

FDT1600N10ALZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDT1600N10ALZ Description

Short technical summary and product information.

The FDT1600N10ALZ is an N-Channel MOSFET produced by On Semiconductor using the POWERTRENCH process. It is designed to minimize on-state resistance while maintaining superior switching performance. Key electrical characteristics include a maximum drain-source voltage of 100V, continuous drain current of 5.6A at 25°C (3.5A at 100°C), and typical on-resistance of 121mOhm at Vgs=10V. The device features low gate charge (typical 2.9nC) and low reverse transfer capacitance (typical 2.04pF), enabling fast switching. It is 100% avalanche tested and offers improved dv/dt capability. The MOSFET is housed in a surface-mount SOT-223-4 package (TO-261AA) with gull-wing leads. It is RoHS compliant and Pb-Free. Typical applications include consumer appliances, LED TV and monitor power supplies, synchronous rectification, uninterruptible power supplies, and micro solar inverters.

FDT1600N10ALZ Quick Information

Product Type: MOSFET (Metal Oxide)
Canonical Name: FDT1600N10ALZ N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

FDT1600N10ALZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDT1600N10ALZ Estimated Pricing

Qty Low High
1+ $1.38 $1.38
10+ $0.87 $0.87
50+ $0.64 $0.64
100+ $0.57 $0.57
500+ $0.44 $0.44
4,000+ $0.31 $0.31
8,000+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDT1600N10ALZ Features

  • 100V drain-source voltage rating.
  • 5.6A continuous drain current capacity.
  • Low on-resistance of 160mOhm maximum.
  • Low gate charge for fast switching.
  • ESD protection up to 5.2kV HBM.

FDT1600N10ALZ Applications

  • Used in consumer appliance power circuits.
  • Ideal for LED TV power supplies.
  • Suitable for synchronous rectification.
  • Used in micro solar inverters.
  • Applicable for uninterruptible power supplies.

FDT1600N10ALZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDT1600N10ALZ?

100V maximum.

What package is the FDT1600N10ALZ available in?

SOT-223-4 (TO-261AA) surface-mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDT1600N10ALZ RoHS compliant?

Yes, it is RoHS compliant and Pb-Free.

What is the continuous drain current at 25°C?

5.6A.

What is the typical on-resistance at 10V gate drive?

121mOhm typical, 160mOhm maximum.

What is the gate threshold voltage range?

1.4V minimum to 2.8V maximum at 250µA.

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