FDS9958-F085 Dual P-Channel PowerTrench MOSFET from ON Semiconductor. Rated for -60V drain-source voltage and -2.9A continuous drain current with 105mΩ maximum on-resistance at 10V gate drive.
Mfr Part #:

FDS9958-F085

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual P-Channel PowerTrench MOSFET from ON Semiconductor. Rated for -60V drain-source voltage and -2.9A continuous drain current with 105mΩ maximum on-resistance at 10V gate drive.
✓ Total Stock: 202,500 pcs

FDS9958-F085 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200,000 pcs
200000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

FDS9958-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs(th) (Max) @ Id

FDS9958-F085 Description

Short technical summary and product information.

The FDS9958-F085 is a dual P-Channel PowerTrench MOSFET from ON Semiconductor. It is designed for load switching and power management applications in portable electronics. The device integrates two P-Channel MOSFETs in a single 8-SOIC package.

 

Key electrical specifications: Drain-source voltage rating of -60V, continuous drain current of -2.9A, and pulsed drain current of -12A. Maximum on-resistance is 105mΩ at Vgs=-10V and Id=-2.9A, and 135mΩ at Vgs=-4.5V and Id=-2.5A. The logic level gate threshold allows drive from low voltage sources. Total gate charge is 23nC maximum.

 

Switching performance: Typical turn-on delay 6ns, rise time 3ns, turn-off delay 27ns, fall time 6ns. Input capacitance 765pF typical. Avalanche energy rating 54mJ. Operating temperature range -55°C to 150°C.

 

Package and mounting: Surface mount 8-SOIC package with 0.154" width. Supplied in tape and reel with 2500 units per reel. RoHS compliant and qualified to AEC Q101 for automotive applications.

FDS9958-F085 Quick Information

Product Type: Dual P-Channel MOSFET
Series: PowerTrench
Canonical Name: FDS9958-F085 Dual P-Channel PowerTrench MOSFET
Subcategory: P-Channel MOSFET

FDS9958-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS9958-F085 Features

  • Dual P-Channel PowerTrench MOSFET design.
  • Rated for -60V drain-source voltage.
  • Continuous drain current of -2.9A.
  • Maximum on-resistance of 105mΩ at 10V.
  • Logic level gate for low voltage drive.

FDS9958-F085 Applications

  • Ideal for load switching applications.
  • Used in power management circuits.
  • Suitable for battery charging and protection.
  • Automotive grade AEC Q101 qualified.

FDS9958-F085 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The FDS9958-F085 has a drain-source voltage rating of -60V.

What package is the FDS9958-F085 available in?

It is available in an 8-SOIC surface mount package (0.154", 3.90mm width).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDS9958-F085 RoHS compliant?

Yes, it is RoHS3 compliant as per the datasheet.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at Id=-250µA, with typical 1.6V.

What is the maximum drain current?

Continuous drain current is -2.9A, pulsed up to -12A.

Is the device qualified for automotive applications?

Yes, it is qualified to AEC Q101.

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