| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request | |
|
1,530 pcs
|
1530 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS9953A is a dual P-Channel enhancement-mode MOSFET from ON Semiconductor, designed for surface mount applications. It comes in an 8-SOIC package with a 3.90mm width.
Electrical characteristics include a drain-source voltage rating of 30V and continuous drain current of 2.9A. The device features a logic level gate, allowing operation at low gate voltages. Maximum on-resistance is 130mOhm at Vgs=10V and Id=1A, and gate charge is 3.5nC at 10V.
The MOSFET is suitable for load switching and power management circuits in portable electronics. It operates over a temperature range of -55°C to 150°C and has a power dissipation of 900mW.
The part is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). It is a direct replacement for the Fairchild FDS9953A.
30V.
2.9A.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction temperature).
RoHS3 Compliant per existing data, but unverified.
130 mOhm maximum at Vgs=10V, Id=1A.
Yes, with maximum threshold voltage of 3V at 250µA.