FDS9934C The FDS9934C is a dual N and P-Channel logic level MOSFET from ON Semiconductor. It features a 20V drain-source voltage, 6.5A (N-Ch) and 5A (P-Ch) drain current, and low 30mOhm on-resistance in a compact 8-SOIC package.
Mfr Part #:

FDS9934C

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS9934C is a dual N and P-Channel logic level MOSFET from ON Semiconductor. It features a 20V drain-source voltage, 6.5A (N-Ch) and 5A (P-Ch) drain current, and low 30mOhm on-resistance in a compact 8-SOIC package.
✓ Total Stock: 10,466 pcs
$ Price Range: $0.28 - $1.20

FDS9934C Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
429 pcs
429 pcs On Request 1 On Request On Request 1235+ On Request On Request
Non-Authorised Inventory information
37 pcs
37 pcs On Request 1 On Request On Request On Request On Request On Request

FDS9934C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

FDS9934C Description

Short technical summary and product information.

The FDS9934C is a dual N and P-Channel logic level MOSFET manufactured by ON Semiconductor. It combines an N-Channel and P-Channel MOSFET in a single 8-SOIC surface mount package, allowing simplified circuit design in applications requiring both channel types.

 

Key electrical specifications include a drain-to-source voltage rating of 20V, with drain current capability of 6.5A for the N-Channel and 5A for the P-Channel. The maximum on-resistance (Rds(on)) is 30mOhm at a gate drive of 4.5V and 6.5A. The device features a logic level gate with a maximum gate threshold voltage of 1.5V at 250µA, enabling direct drive from low-voltage logic. Gate charge is 9nC at 4.5V, and input capacitance is 650pF at Vds=10V.

 

The MOSFET is housed in an industry-standard 8-SOIC package (0.154" width, 3.90mm) and supports surface mount assembly. Operating junction temperature ranges from -55°C to 150°C, with maximum power dissipation of 900mW. The device is RoHS3 compliant and unaffected by REACH, with an MSL rating of 1 (unlimited).

FDS9934C Quick Information

Product Type: MOSFET Array
Canonical Name: FDS9934C MOSFET N/P-Channel 20V 6.5A/5A 8-SOIC
Subcategory: Transistors - FETs, MOSFETs - Arrays

FDS9934C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS9934C Estimated Pricing

Qty Low High
1+ $1.20 $1.20
10+ $0.75 $0.75
50+ $0.56 $0.56
100+ $0.49 $0.49
500+ $0.38 $0.38
2,500+ $0.31 $0.31
5,000+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS9934C Features

  • 20V drain-source voltage rating.
  • 6.5A N-Channel, 5A P-Channel current.
  • Low 30mOhm on-resistance @ 4.5V.
  • Logic level gate for low voltage drive.
  • Surface mount 8-SOIC package.

FDS9934C Applications

  • Suitable for power management in portable devices.
  • Ideal for load switching and routing applications.
  • Used in DC-DC converter and battery protection circuits.

FDS9934C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

20V

What is the package type?

8-SOIC (0.154", 3.90mm Width)

What is the operating temperature range?

-55°C to 150°C (junction temperature)

Is the FDS9934C RoHS compliant?

Yes, RoHS3 Compliant

What are the drain current ratings?

6.5A for N-Channel, 5A for P-Channel

What is the on-resistance?

30mOhm maximum at Id=6.5A, Vgs=4.5V

What is the gate threshold voltage?

1.5V maximum at Id=250µA

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