| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,934 pcs
|
23934 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
11,357 pcs
|
11357 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
1,845 pcs
|
1845 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,261 pcs
|
1261 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
1,260 pcs
|
1260 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
325 pcs
|
325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
31 pcs
|
31 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS9926A is a dual N-Channel MOSFET from ON Semiconductor, fabricated using advanced POWERTRENCH process technology. It is designed for power management applications with a wide gate drive voltage range of 2.5V to 10V.
Key electrical specifications include a maximum drain-source voltage of 20V, continuous drain current of 6.5A, and pulsed drain current of 20A. The on-resistance is typically 25mOhm at 4.5V gate drive and 35mOhm at 2.5V, with maximum values of 30mOhm and 43mOhm respectively. The logic-level gate threshold voltage ranges from 0.6V to 1.5V. The device features low gate charge (9nC) and input capacitance (650pF), enabling efficient high-frequency switching.
The MOSFET is housed in an 8-SOIC surface mount package (0.154", 3.90mm width) with a standard tape and reel packaging of 2500 pieces. It operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 2W for dual operation and 1.6W for single operation. Typical applications include battery protection circuits, load switches, and general power management in portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
| 10+ | $0.74 | $0.74 |
| 50+ | $0.54 | $0.54 |
| 100+ | $0.48 | $0.48 |
| 500+ | $0.37 | $0.37 |
| 2,500+ | $0.30 | $0.30 |
| 5,000+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V maximum.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant and Pb-Free and Halide Free per the datasheet.
6.5A continuous, 20A pulsed.
25mOhm typical, 30mOhm maximum.
0.6V minimum, 1V typical, 1.5V maximum at 250µA.