| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
833 pcs
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833 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS9431A-F085 is a P-Channel enhancement mode MOSFET from On Semiconductor, designed for low-voltage power management applications. It features a drain-source voltage rating of 20V and a continuous drain current of 3.5A at ambient temperature. The device offers a maximum on-resistance of 130 mOhm at a gate drive of 4.5V, ensuring efficient power switching with minimal conduction losses.
Key electrical characteristics include a gate threshold voltage of 1V maximum, a total gate charge of 8.5 nC at 4.5V, and an input capacitance of 405 pF at 10V drain-source voltage. These parameters enable fast switching and low gate drive requirements, making the MOSFET suitable for battery-powered and portable electronics.
The device is housed in an industry-standard 8-SOIC surface mount package with a 3.90mm body width, allowing for compact PCB layouts. It supports an operating junction temperature range of -55°C to 150°C and a maximum power dissipation of 2.5W at ambient temperature. The MOSFET is RoHS3 compliant and has an MSL rating of 1 (unlimited).
The drain-source voltage rating is 20V.
It comes in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 compliant, but this information is unverified.
The maximum on-resistance is 130 mOhm at 3.5A drain current and 4.5V gate-source voltage.
The maximum gate threshold voltage is 1V at 250µA drain current.
The maximum total gate charge is 8.5 nC at 4.5V gate-source voltage.