| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,728 pcs
|
3728 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS9400A is a P-Channel MOSFET from On Semiconductor, designed for general-purpose switching and power management applications. It features a drain-source voltage rating of 30V and a continuous drain current of 3.4A at ambient temperature. The device offers a low on-resistance of 130mOhm maximum at 1A drain current with a 10V gate drive, ensuring efficient power handling. The gate threshold voltage is 3V maximum at 250µA, and the maximum gate-source voltage is ±25V. Input capacitance is 205pF at 15V Vds, and total gate charge is 3.5nC at 5V, enabling fast switching. Power dissipation is rated at 2.5W at ambient temperature. The MOSFET is housed in a surface-mount 8-SOIC package (0.154" width, 3.90mm width) and operates over a junction temperature range of -55°C to 175°C. This component is suitable for load switching, battery protection, and DC-DC converter circuits where P-Channel topology is preferred.
| Qty | Low | High |
|---|---|---|
| 3,728+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 175°C (junction).
Yes, it is RoHS3 compliant.
3.4A at ambient temperature (Ta).
3V maximum at 250µA drain current.
130mOhm maximum at 1A drain current and 10V gate-source voltage.