FDS8984 The FDS8984 is a dual N-channel MOSFET from On Semiconductor in an 8-SOIC surface-mount package. It is rated for 30V drain-source voltage, 7A drain current, and 23mΩ maximum on-resistance.
Mfr Part #:

FDS8984

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS8984 is a dual N-channel MOSFET from On Semiconductor in an 8-SOIC surface-mount package. It is rated for 30V drain-source voltage, 7A drain current, and 23mΩ maximum on-resistance.
✓ Total Stock: 18,386 pcs
$ Price Range: $0.28 - $1.19

FDS8984 Available from 7 distributors

✓ Authorised
✓ Non-Authorised

FDS8984 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

FDS8984 Description

Short technical summary and product information.

The FDS8984 is a dual N-channel MOSFET from On Semiconductor, configured with two independent N-channel MOSFETs in a single 8-SOIC package. This device is rated for a drain-to-source voltage of 30 V and a continuous drain current of 7 A, making it suitable for low-voltage power switching applications.

 

The MOSFET features a maximum drain-source on-resistance of 23 mΩ at a gate drive of 10 V and a drain current of 7 A. Gate charge is limited to 13 nC at 10 V, and input capacitance is limited to 635 pF at 15 V. The gate threshold voltage is 2.5 V maximum, and the device includes a logic-level gate feature, allowing control by lower voltage logic signals. The dual configuration simplifies PCB layout in half-bridge or synchronous rectifier circuits.

 

The device is housed in an 8-SOIC (0.154", 3.90mm width) surface-mount package. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 1.6 W.

FDS8984 Quick Information

Product Type: MOSFET Array
Series: FDS8984
Canonical Name: Dual N-Channel MOSFET 30V 7A 8-SOIC
Subcategory: MOSFET Arrays

FDS8984 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS8984 Estimated Pricing

Qty Low High
1+ $1.19 $1.19
10+ $0.74 $0.74
50+ $0.55 $0.55
100+ $0.49 $0.49
500+ $0.38 $0.38
2,500+ $0.30 $0.30
5,000+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS8984 Features

  • Dual N-channel MOSFETs in one 8-SOIC package.
  • Rated for 30V drain-source voltage.
  • Supports 7A continuous drain current.
  • Low 23mOhm maximum on-resistance at 10V.
  • Logic-level gate for low voltage control.

FDS8984 Applications

  • Suitable for half-bridge power converter circuits.
  • Used in synchronous rectification power stages.
  • Ideal for load switching in battery devices.
  • Works with logic-level gate drive signals.

FDS8984 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS8984?

The drain-source voltage rating is 30 V.

What is the package type of the FDS8984?

The FDS8984 is available in an 8-SOIC (0.154", 3.90mm width) surface-mount package.

What is the operating temperature range of the FDS8984?

The device operates over a junction temperature range of -55°C to 150°C.

Is the FDS8984 RoHS compliant?

The FDS8984 is listed as RoHS3 compliant in the existing database, but this status is unverified and should be confirmed against official documentation.

What is the drain current rating of the FDS8984?

The drain current rating is 7 A.

What is the maximum on-resistance of the FDS8984?

The maximum drain-source on-resistance is 23 mΩ at Vgs=10V and Id=7A.

Does the FDS8984 support logic-level gate drive?

Yes, the FDS8984 has a logic-level gate feature, which allows the gate to be driven at lower voltages.

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