| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
348 pcs
|
348 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
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| Power Dissipation |
The FDS8978 is a Dual N-Channel MOSFET manufactured by Onsemi, designed for efficient power switching applications. It integrates two N-channel MOSFETs within a single SO-8 surface mount package, optimizing PCB layout and reducing board space.
This MOSFET boasts a 30V Drain Source Voltage and supports a Continuous Drain Current of 7.6A per channel. Its On Resistance is rated at 18 mOhm at the specified gate drive, contributing to minimized conduction losses. The device also features low gate charge for efficient switching and a total package power dissipation rating of 2.5W.
The FDS8978 operates within a wide temperature range of -55 C to +150 C, ensuring reliable performance in various environments. Its advanced trench MOSFET process technology enhances its dependability. The component is suitable for demanding power management designs, including DC-DC synchronous buck converters, load switching, battery protection, and motor drive circuits.
Key features include its logic-level gate drive compatibility, allowing direct interface with common controllers and microcontrollers. The compact SO-8 package and surface mount capability make it ideal for space-constrained applications. Its combination of low resistance, fast switching capability, and compact form factor makes it a dependable solution for power conversion, load control, and protection circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
7.6 A per channel.
18 mOhm at specified gate drive.
Low gate charge for efficient switching.
2.5 W total package rating.
-55°C to +150°C.
SO-8 surface mount package.