| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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348 pcs
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348 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The FDS8978 is a dual N-channel MOSFET designed by Onsemi for efficient power switching applications. It integrates two N-channel MOSFETs within a single SO-8 surface-mount package, optimizing compact PCB layouts and simplifying routing.
Key electrical specifications include a 30V drain-source voltage rating and a continuous drain current of 7.6A per channel. The device exhibits a low on-resistance of 18 mOhm at the specified gate drive, minimizing conduction losses. It also features low gate charge for efficient switching and is compatible with logic-level gate drives, allowing direct interface with common controllers.
The FDS8978 operates across a wide temperature range from -55 C to +150 C, ensuring reliable performance in demanding environments. Its advanced trench MOSFET process technology contributes to its efficiency and performance. The component is suitable for various power management designs, including DC-DC synchronous buck converters, load switching, battery protection, and motor drive circuits.
Packaged in an SO-8 surface-mount case, the FDS8978 facilitates space-saving designs. Its construction and specifications make it a dependable solution for power conversion, load control, and protection circuits where space efficiency and electrical performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage for the FDS8978 is 30V.
The continuous drain current is 7.6A per channel.
The on-resistance is 18 mOhm at the specified gate drive.
The operating temperature range is -55 C to +150 C.
The FDS8978 is available in an SO-8 package.
The FDS8978 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.