| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,643 pcs
|
1643 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
196 pcs
|
196 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current Continuous (Maximum @ Vgs=4.5 V, Tc=25 °C) | |
| Drain Current, Pulsed | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| Drain-Source On Resistance (Typical/Maximum @ I_D=6.9 A, V_GS=4.5 V) | |
| Drain-Source On Resistance (Typical/Maximum @ I_D=7.5 A, V_GS=10 V) | |
| Drain-Source On Resistance (Typical/Maximum @ I_D=7.5 A, V_GS=10 V, T_C=150 °C) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Resistance (Typical/Maximum @ V_GS=0.5 V, f=1 MHz) | |
| Gate Threshold Voltage (Minimum/Maximum @ I_D=250 µA, V_DS=V_GS) | |
| Gate-Source Voltage (Maximum) | |
| Gate-to-Source Leakage Current | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Input Capacitance (Typical/Maximum @ V_DS=15 V, V_GS=0 V, f=1 MHz) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Typical) | |
| Power | |
| Power Dissipation Derating Factor | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance (Typical) | |
| Single Pulse Avalanche Energy | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance, Junction to Ambient (Nominal @ 0.02 in² pad of 2 oz copper) | |
| Thermal Resistance, Junction to Ambient (Nominal @ 0.5 in² pad of 2 oz copper) | |
| Thermal Resistance, Junction to Ambient (Nominal @ minimum pad) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (Maximum @ V_DS=24 V, V_GS=0 V, T_J=150 °C) | |
| Zero Gate Voltage Drain Current (Maximum @ V_DS=24 V, V_GS=0 V, T_J=25 °C) |
The FDS8978 is a dual N-channel enhancement mode MOSFET designed for efficient power management in DC/DC converters. It features two independent MOSFETs in a single 8-SOIC package, offering a space-saving solution for synchronous rectification and switching applications.
Key electrical specifications include a maximum drain-source voltage of 30V and continuous drain current of 7.5A at 10V gate drive (6.9A at 4.5V). The on-resistance is typically 14mΩ and maximum 18mΩ at 10V gate bias, with a maximum of 21mΩ at 4.5V. The device supports logic level gate drive, allowing direct interface with low-voltage controllers.
The MOSFET incorporates trench technology for low gate charge (26nC typical) and fast switching. Gate threshold voltage ranges from 1.2V to 2.5V. Thermal characteristics include junction-to-case resistance of 40°C/W and junction-to-ambient of 78°C/W (on 0.5 in² copper pad).
Packaged in an 8-SOIC (0.154", 3.90mm width) surface mount package, the FDS8978 is RoHS3 compliant with MSL 1 (unlimited) moisture sensitivity. It is suitable for battery management, load switching, and power supply designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.76 | $0.76 |
| 10+ | $0.47 | $0.47 |
| 50+ | $0.35 | $0.35 |
| 100+ | $0.30 | $0.30 |
| 500+ | $0.23 | $0.23 |
| 3,000+ | $0.18 | $0.18 |
| 9,000+ | $0.15 | $0.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
7.5 A at Vgs=10V, Tc=25°C; 6.9 A at Vgs=4.5V, Tc=25°C.
Maximum 18 mΩ at Vgs=10V, Id=7.5A; maximum 21 mΩ at Vgs=4.5V, Id=6.9A.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant according to existing database records (not verified with document).
Minimum 1.2V, maximum 2.5V at Id=250µA.