| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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120,533 pcs
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120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS8962C from On Semiconductor is a dual N and P-Channel enhancement mode power MOSFET fabricated using the advanced PowerTrench process. This process minimizes on-state resistance while maintaining superior switching performance. The N-Channel MOSFET is rated for 30V drain-source voltage and 7A continuous drain current, with a maximum on-resistance of 30mΩ at 10V gate drive (44mΩ at 4.5V). The P-Channel MOSFET is rated for -30V and -5A, with 52mΩ on-resistance at -10V (80mΩ at -4.5V). Both channels feature logic level gate drive capability up to ±20V.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. The dual configuration allows compact complementary pair designs in power management circuits.
The FDS8962C is packaged in the industry-standard 8-SOIC surface mount package (0.154", 3.90mm width), rated for surface mount assembly. Operating junction temperature range is -55°C to 150°C, with thermal resistance junction-to-ambient of 78°C/W and junction-to-case of 40°C/W.
The drain-source voltage rating is 30V for the N-channel and -30V for the P-channel. Gate-source voltage is ±20V for both.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to +150°C.
The component is marked as RoHS3 Compliant, but this status is unverified.
The N-channel can handle 7A continuous, and the P-channel can handle -5A continuous at 25°C.
N-channel Rds(on) is 30mΩ max at Vgs=10V, Id=7A; 44mΩ at Vgs=4.5V, Id=6A. P-channel Rds(on) is 52mΩ max at Vgs=-10V, Id=-5A; 80mΩ at Vgs=-4.5V, Id=-4A.