| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current (@ P-Channel) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS8960C is a dual MOSFET array from On Semiconductor combining N-Channel and P-Channel devices in a single 8-SOIC package. The N-Channel MOSFET is rated for 35V drain-source voltage and 7A continuous drain current, while the P-Channel supports 35V and 5A. Maximum power dissipation is 900mW. On-resistance is 24mOhm maximum at 7A and 10V gate drive. The gate charge is 7.7nC at 5V, and input capacitance is 570pF at 15V. The device features a logic level gate threshold of 3V at 250µA, enabling direct drive from low-voltage logic. Operating temperature range is -55°C to 150°C. The surface-mount 8-SOIC package (0.154" width, 3.90mm) is suitable for automated assembly. This MOSFET array is designed for power management, load switching, and DC-DC converter applications where complementary N and P-Channel devices are needed in a compact footprint.
The drain-source voltage rating is 35V for both N and P-Channel MOSFETs.
The device is supplied in an 8-SOIC surface mount package (0.154" width, 3.90mm).
The operating temperature range is -55°C to 150°C (junction).
The RoHS status is listed as RoHS3 compliant, but this is unverified.
The N-Channel is rated for 7A continuous drain current, and the P-Channel for 5A.
The maximum gate threshold voltage is 3V at 250µA drain current, indicating a logic level gate.
The maximum on-resistance is 24mOhm at 7A drain current and 10V gate-source voltage.