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FDS8958B FDS8958B is a dual N and P-Channel MOSFET array with 30V drain-source voltage, 6.4A continuous drain current (N-Channel) and 4.5A (P-Channel).
Mfr Part #:

FDS8958B

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS8958B is a dual N and P-Channel MOSFET array with 30V drain-source voltage, 6.4A continuous drain current (N-Channel) and 4.5A (P-Channel).
Total Stock: 3,525 pcs
$ Price Range: $0.29 - $1.31

FDS8958B Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,332 pcs
2332 pcs On Request 1 On Request On Request 22-Oct On Request On Request
Non-Authorised Inventory information
1,193 pcs
1193 pcs On Request 1 On Request On Request 1149+0941+ On Request On Request

FDS8958B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

FDS8958B Description

Short technical summary and product information.

The FDS8958B is a dual N and P-Channel enhancement-mode MOSFET array manufactured by On Semiconductor. It is designed for low-voltage power management applications requiring both N-Channel and P-Channel devices in a single package.

 

The device features a drain-source voltage rating of 30V for both channels. The N-Channel MOSFET can handle a continuous drain current of 6.4A, while the P-Channel handles 4.5A. On-resistance is 26 mOhm maximum at 6.4A and 10V gate drive. Gate threshold voltage is 3V maximum at 250µA. The MOSFET has a logic-level gate feature, allowing operation at lower gate voltages.

 

With a maximum gate charge of 12 nC at 10V and input capacitance of 540 pF at 15V, the device offers efficient switching performance. Maximum power dissipation is 900 mW, and operating temperature range is -55°C to 150°C.

 

The FDS8958B is housed in a standard 8-SOIC surface-mount package, making it suitable for compact PCB layouts. It is RoHS3 compliant (as per existing database records).

FDS8958B Quick Information

Product Type: MOSFET Array
Canonical Name: FDS8958B MOSFET N/P-CH 30V 6.4/4.5A 8SOIC
Subcategory: N and P-Channel MOSFET

FDS8958B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant

FDS8958B Estimated Pricing

Qty Low High
1+ $1.31 $1.31
10+ $0.82 $0.82
100+ $0.54 $0.54
500+ $0.42 $0.42
1,000+ $0.39 $0.39
2,500+ $0.34 $0.34
5,000+ $0.32 $0.32
7,500+ $0.31 $0.31
12,500+ $0.29 $0.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS8958B Features

  • Dual N and P-Channel MOSFET array.
  • Rated for 30V drain-source voltage.
  • Low 26 mOhm on-resistance at 10V.
  • Logic-level gate threshold of 3V maximum.
  • Surface-mount 8-SOIC package.

FDS8958B Applications

  • Ideal for DC-DC converter circuits.
  • Used in load switch and power management.
  • Suitable for battery-powered portable devices.
  • Common in motor driver and inverter modules.

FDS8958B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS8958B?

30V.

What is the package type of the FDS8958B?

8-SOIC (0.154", 3.90mm Width).

What is the operating temperature range?

-55°C to 150°C.

Is the FDS8958B RoHS compliant?

Yes, RoHS3 compliant.

What are the continuous drain currents for N and P channels?

6.4A for N-Channel, 4.5A for P-Channel.

What is the maximum on-resistance?

26 mOhm at 6.4A and 10V.

What is the gate threshold voltage?

3V maximum at 250µA.

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