| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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137 pcs
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137 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The FDS8958A is a dual enhancement mode power MOSFET featuring both N-channel and P-channel transistors. Produced using Fairchild Semiconductor's advanced PowerTrench process, it is tailored for minimal on-state resistance and superior switching performance. This makes it well-suited for low voltage and battery-powered applications where low in-line power loss and fast switching are critical.
The N-channel transistor (Q1) offers 7.0A continuous drain current and 30V drain-source voltage, with an R DS(on) of 0.028W at VGS = 10V. The P-channel transistor (Q2) provides -5A continuous drain current and -30V drain-source voltage, with an R DS(on) of 0.052W at VGS = -10V.
Key electrical characteristics include a fast switching speed and high power handling capability. The device is housed in a widely used SO-8 surface mount package, facilitating integration into various electronic designs. Absolute maximum ratings include a gate-source voltage of ±20V and an operating junction temperature range of -55°C to +150°C.
Thermal characteristics include a junction-to-ambient thermal resistance of 78°C/W and a junction-to-case thermal resistance of 40°C/W. The device is supplied on a 13-inch reel with a 12mm tape width, in quantities of 2500 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V for the N-channel and -30V for the P-channel.
The continuous drain current is 7A for the N-channel and -5A for the P-channel.
For the N-channel, it is 0.028W at VGS = 10V and 4.5V. For the P-channel, it is 0.052W at VGS = -10V and 0.080W at VGS = -4.5V.
The FDS8958A comes in an SO-8 surface mount package.
The operating and storage junction temperature range is -55°C to +150°C.