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FDS8958A The Fairchild Semiconductor FDS8958A is a dual N- and P-channel MOSFET designed for low voltage and battery-powered applications. It offers low on-state resistance and fast switching performance.
Mfr Part #:

FDS8958A

Available from 1 distributors
Mfr Name: Fairchild Camera&Instrument
Fairchild Camera&Instrument
The Fairchild Semiconductor FDS8958A is a dual N- and P-channel MOSFET designed for low voltage and battery-powered applications. It offers low on-state resistance and fast switching performance.
✓ Total Stock: 287 pcs
$ Price Range: $1.58

FDS8958A Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
287 pcs
On Request
287 pcs On Request 1 On Request On Request 03+ On Request On Request
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FDS8958A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Halogen Free
Industrial Grade
Lead Spacing
Lead Style
Medical Grade
Military Grade
Mounting Type
SVHC Present
Storage Temperature
Tape & Reel
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FDS8958A Description

Short technical summary and product information.

The FDS8958A from Fairchild Semiconductor is a dual enhancement mode power MOSFET featuring both N-channel and P-channel transistors in a single package. This device utilizes Fairchild's advanced PowerTrench process, optimized for minimal on-state resistance and superior switching characteristics. It is well-suited for applications requiring low power loss and rapid switching, such as low voltage and battery-powered systems.

 

The N-channel transistor (Q1) offers a continuous drain current of 7.0A and a drain-source voltage of 30V, with an R DS(on) as low as 0.028W at VGS = 10V. The P-channel transistor (Q2) supports a continuous drain current of -5A and a drain-source voltage of -30V, with an R DS(on) of 0.052W at VGS = -10V.

 

This MOSFET is available in a widely used surface mount SO-8 package, facilitating integration into compact designs. Its high power handling capability and efficient performance make it a reliable choice for various electronic circuits.

 

Key electrical characteristics include a drain-source breakdown voltage of 30V for the N-channel and -30V for the P-channel. The gate-source voltage range is ±20V. The operating and storage junction temperature range is from -55°C to +150°C.

FDS8958A Quick Information

Product Type: MOSFET
Series: FDS8958A
Canonical Name: FDS8958A Dual N- and P-Channel PowerTrench MOSFET
Subcategory: Dual N- and P-Channel

FDS8958A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDS8958A Estimated Pricing

Qty Low High
1+ $1.58 $1.58

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS8958A Features

  • Dual N- and P-Channel MOSFET configuration.
  • Optimized for low voltage applications.
  • Low on-state resistance (R DS(on)).
  • Fast switching performance.
  • Surface mount SO-8 package.

FDS8958A Applications

  • Suitable for battery-powered devices.
  • Ideal for low power loss circuits.
  • Enables fast switching applications.
  • Used in low voltage power management.

FDS8958A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the N-channel transistor?

The drain-source breakdown voltage for the N-channel transistor (Q1) is 30V.

What is the drain-source breakdown voltage for the P-channel transistor?

The drain-source breakdown voltage for the P-channel transistor (Q2) is -30V.

What is the typical R DS(on) for the N-channel transistor at VGS = 10V?

The typical R DS(on) for the N-channel transistor (Q1) at VGS = 10V is 0.028Ω.

What is the typical R DS(on) for the P-channel transistor at VGS = -10V?

The typical R DS(on) for the P-channel transistor (Q2) at VGS = -10V is 0.052Ω.

What is the operating temperature range for this MOSFET?

The operating and storage junction temperature range is -55°C to +150°C.

What package is the FDS8958A supplied in?

The FDS8958A is supplied in an SO-8 surface mount package.

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