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FDS8958A The FDS8958A is a dual N and P-Channel logic-level MOSFET from On Semiconductor. It features 30V drain-source voltage, 7A/5A continuous drain current, and low on-resistance.
Mfr Part #:

FDS8958A

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS8958A is a dual N and P-Channel logic-level MOSFET from On Semiconductor. It features 30V drain-source voltage, 7A/5A continuous drain current, and low on-resistance.
✓ Total Stock: 31,500 pcs
$ Price Range: $0.18 - $0.87

FDS8958A Available from 7 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS8958A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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FDS8958A Description

Short technical summary and product information.

The FDS8958A is a complementary N and P-Channel MOSFET array designed for low-voltage and battery-powered applications. The N-Channel is rated for 30V and 7A, the P-Channel for -30V and -5A. Both channels support logic-level gate drive with Vgs thresholds as low as 1V (N-Ch) and -1V (P-Ch).

 

On-resistance is minimized for efficient switching: N-Channel Rds(on) is typically 19mΩ (max 28mΩ) at Vgs=10V, and 24mΩ typical (max 40mΩ) at Vgs=4.5V. P-Channel Rds(on) is typically 42mΩ (max 52mΩ) at Vgs=-10V, and 65mΩ typical (max 80mΩ) at Vgs=-4.5V. Gate charge for the N-Channel is 16nC max at Vgs=10V.

 

The device is housed in a surface-mount 8-SOIC package and offers a junction-to-ambient thermal resistance of 78°C/W. Total power dissipation for dual operation is 1.6W, with 0.9W for single-channel operation. These ratings make it suitable for compact power management and load switching circuits.

FDS8958A Quick Information

Product Type: Dual MOSFET Array
Canonical Name: 30V N and P-Channel MOSFET Array, 7A/5A, 8-SOIC
Subcategory: N and P-Channel

FDS8958A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected

FDS8958A Estimated Pricing

Qty Low High
1+ $0.87 $0.87
10+ $0.54 $0.54
50+ $0.40 $0.40
100+ $0.35 $0.35
500+ $0.27 $0.27
3,000+ $0.21 $0.21
9,000+ $0.18 $0.18

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS8958A Features

  • 30V maximum drain-source voltage (N-Ch).
  • 7A continuous drain current (N-Ch).
  • Logic level gate drive (Vgs 4.5V).
  • Low Rds(on) 28mΩ max at Vgs=10V (N-Ch).
  • Surface mount 8-SOIC package.

FDS8958A Applications

  • Ideal for battery-powered applications.
  • Suitable for low-voltage motor drives.
  • Used in power management circuits.
  • Applicable for load switching and DC-DC converters.
  • Works in complementary H-bridge topologies.

FDS8958A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the N-Channel?

30V for N-Channel, -30V for P-Channel.

What is the continuous drain current rating?

N-Channel: 7A; P-Channel: -5A.

What is the N-Channel on-resistance at Vgs=10V?

Typically 19mΩ, maximum 28mΩ at Id=7A.

What package is the FDS8958A available in?

8-SOIC (0.154", 3.90mm Width), surface mount.

Is the FDS8958A RoHS compliant?

RoHS3 Compliant according to existing database (unverified).

What is the maximum power dissipation for single operation?

0.9W for single operation, 1.6W for dual operation.

What is the N-Channel gate threshold voltage range?

Minimum 1V, typical 1.9V, maximum 3V at Id=250µA.

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