| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,742 pcs
|
2742 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
572 pcs
|
572 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
572 pcs
|
572 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS8949 is a dual N-channel MOSFET designed for efficient power switching in space-constrained applications. It features a logic-level gate, allowing direct drive from low-voltage logic circuits. With a maximum drain-source voltage of 40V and continuous drain current of 6A, it suits a variety of low-to-medium power switching tasks.
The device offers a low on-resistance of 29 mOhm maximum at 6A and 10V gate drive, minimizing conduction losses. Gate charge is 11 nC maximum at 5V, and input capacitance is 955 pF maximum at 20V, enabling fast switching. Power dissipation is rated at 2W.
Packaged in an 8-SOIC (0.154", 3.90mm width) surface-mount package, the FDS8949 is suitable for automated assembly. The operating junction temperature range is -55°C to 150°C. This MOSFET array integrates two independent N-channel transistors in a single package, saving board space.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.54 | $1.54 |
| 10+ | $0.97 | $0.97 |
| 50+ | $0.73 | $0.73 |
| 100+ | $0.65 | $0.65 |
| 500+ | $0.51 | $0.51 |
| 2,500+ | $0.41 | $0.41 |
| 5,000+ | $0.38 | $0.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 40V.
The continuous drain current is 6A.
The maximum on-resistance is 29 mOhm at 6A drain current and 10V gate-source voltage.
The FDS8949 is available in an 8-SOIC (0.154", 3.90mm width) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The FDS8949 is marked as RoHS3 compliant, but this is unverified.