| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
542 pcs
|
542 pcs | On Request | 1 | On Request | On Request | 0030P/ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS8936A is a dual N-Channel power MOSFET from On Semiconductor, designed for efficient switching applications. It features a drain-source breakdown voltage of 30V and a continuous drain current rating of 6A at 25°C ambient temperature.
The device offers a maximum drain-source on-resistance of 28mOhm at 6A drain current and 10V gate drive, ensuring low conduction losses. The gate charge is specified at 27nC maximum at 10V, enabling fast switching transitions.
Housed in an industry-standard 8-SOIC surface mount package with a 3.90mm width, the FDS8936A supports compact PCB layouts. Its operating junction temperature range spans from -55°C to 150°C, suitable for demanding environments. The MOSFET is also rated for a maximum power dissipation of 900mW at ambient temperature.
With a dual N-channel configuration, this component is suited for synchronous rectification, DC-DC converter primary switches, and other power management circuits requiring matched MOSFET pairs.
| Qty | Low | High |
|---|---|---|
| 151+ | $1.99 | $1.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
6A at 25°C ambient temperature.
28mOhm maximum at 6A drain current and 10V gate-source voltage.
8-SOIC (0.154", 3.90mm width), surface mount.
-55°C to 150°C (junction temperature).
Listed as RoHS3 compliant, but this is unverified.
3V maximum at 250µA drain current.