| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
498 pcs
|
498 pcs | On Request | 1 | On Request | On Request | PE9 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS8935 is a dual P-Channel power MOSFET manufactured by On Semiconductor. It is designed for applications requiring two independent P-Channel MOSFETs in a single 8-SOIC package. The device features a drain-source voltage rating of 80V and a continuous drain current of 2.1A. The on-resistance is typically 183 mOhm at a gate-source voltage of 10V and a drain current of 2.1A.
The MOSFET incorporates logic-level gate drive, allowing it to be driven directly by low-voltage logic circuits. The gate charge is 19 nC at 10V, and the input capacitance is 879 pF at 40V drain-source voltage. The maximum gate threshold voltage is 3V at 250 µA.
Power dissipation is rated at 1.6W. The device operates over a junction temperature range of -55°C to 150°C. It is available in the standard 8-SOIC surface-mount package, making it suitable for space-constrained designs.
This dual MOSFET is ideal for applications such as load switching, power management, and DC-DC converters where two P-Channel MOSFETs are needed in a compact footprint.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.66 | $0.66 |
| 5,000+ | $0.63 | $0.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 80V.
The continuous drain current is 2.1A.
The maximum on-resistance is 183 mOhm at a drain current of 2.1A and gate-source voltage of 10V.
The device is offered in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 compliant, but this is unverified.
The maximum gate threshold voltage is 3V at a drain current of 250 µA.