| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
154 pcs
|
154 pcs | On Request | 1 | On Request | On Request | 0436P/ | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Current - Continuous Drain (Maximum @ P-Channel) | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source Voltage (Maximum @ P-channel) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS8928A is a complementary N and P-Channel logic level MOSFET array from On Semiconductor, integrating two MOSFETs in a single 8-SOIC surface mount package. This device is designed for low-voltage power management and load switching applications where board space is limited.
Key electrical specifications include a 30V maximum drain-source voltage for the N-Channel and 20V for the P-Channel, with continuous drain currents of 5.5A and 4A respectively. The on-resistance (Rds(on)) is just 30 milliohms at 5.5A gate drive of 4.5V, enabling efficient operation. The gate charge is 28nC at 4.5V, and input capacitance is 900pF at 10V drain-source voltage. A logic level gate threshold of 1V allows direct drive from low-voltage logic.
The device is housed in an 8-SOIC package (0.154" width, 3.90mm) with a supplier package code of 8-SOIC. Maximum power dissipation is 900mW, and operating junction temperature ranges from -55°C to 150°C. The MOSFET array is surface mount, suitable for automated assembly.
Compliance data indicates RoHS3 compliance, MSL level 1 (unlimited), and REACH unaffected, though these have not been independently verified. The part is a result of the Fairchild Semiconductor integration into ON Semiconductor.
Typical applications include DC-DC converter synchronous rectification, battery protection circuits, load switching, and power management in portable devices.
The N-Channel MOSFET is rated for 30V maximum, and the P-Channel MOSFET is rated for 20V maximum.
N-Channel: 5.5A, P-Channel: 4A.
The device is offered in an 8-SOIC (0.154", 3.90mm Width) surface mount package with a supplier device package of 8-SOIC.
The junction temperature range is -55°C to 150°C.
Yes, it is marked as RoHS3 compliant, though this is unverified.