| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS89141 is a dual N-Channel MOSFET from ON Semiconductor designed for efficient power switching. It features a drain-source breakdown voltage of 100V and a continuous drain current of 3.5A. The device offers a maximum on-resistance of 62mOhm at 10V gate drive, with a logic level gate feature enabling low-voltage control. Input capacitance is 398pF at 50V, and gate charge is 7.1nC at 10V, supporting fast switching. The MOSFET operates over a junction temperature range of -55°C to 150°C and is housed in an 8-SOIC surface mount package (0.154" width, 3.90mm pitch). This component is suitable for applications requiring compact dual MOSFET solutions with moderate power handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.18 | $4.18 |
| 10+ | $2.74 | $2.74 |
| 50+ | $2.12 | $2.12 |
| 100+ | $1.93 | $1.93 |
| 500+ | $1.61 | $1.61 |
| 2,500+ | $1.34 | $1.34 |
| 5,000+ | $1.31 | $1.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V (minimum).
The continuous drain current is 3.5A (nominal).
The maximum on-resistance is 62mOhm at Id=3.5A and Vgs=10V.
It is available in an 8-SOIC surface mount package (0.154" width, 3.90mm pitch).
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 Compliant, but this is unverified and should be treated as low confidence.
Yes, it features a logic level gate for low-voltage drive.