FDS8884 The FDS8884 is a 30V N-Channel MOSFET by On Semiconductor, capable of 8.5A continuous drain current with low on-resistance in an SOP-8 surface-mount package.
Mfr Part #:

FDS8884

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS8884 is a 30V N-Channel MOSFET by On Semiconductor, capable of 8.5A continuous drain current with low on-resistance in an SOP-8 surface-mount package.
✓ Total Stock: 11,766 pcs
$ Price Range: $0.13 - $0.65

FDS8884 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDS8884 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS8884 Description

Short technical summary and product information.

The FDS8884 is a 30V N-Channel MOSFET designed for high-efficiency DC/DC converters and power management applications. It features a maximum drain current of 8.5A continuous and 40A pulsed, with a drain-source on-resistance of typically 19mΩ at Vgs=10V and 23mΩ at Vgs=4.5V. The device is optimized for low gate charge (9.2nC typical) and fast switching speeds, with typical turn-on delay of 5ns and rise time of 9ns.

 

This MOSFET is housed in an industry-standard SOP-8 (8-SOIC) surface-mount package with a junction-to-ambient thermal resistance of 50°C/W and a junction-to-case thermal resistance of 25°C/W. It operates over a junction temperature range of -55°C to 150°C. The gate threshold voltage ranges from 1.2V to 2.5V, allowing drive with both 4.5V and 10V logic levels.

 

The FDS8884 includes an integrated source-drain diode with a typical forward voltage of 0.9V and reverse recovery time of 33ns. It is rated for an avalanche energy of 32mJ, suitable for rugged applications. Typical applications include DC/DC converters, power supply loops, and load switches.

FDS8884 Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: FDS8884 N-Channel MOSFET 30V 8.5A
Subcategory: N-Channel MOSFET

FDS8884 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDS8884 Estimated Pricing

Qty Low High
1+ $0.65 $0.65
10+ $0.40 $0.40
50+ $0.29 $0.29
100+ $0.26 $0.26
500+ $0.19 $0.19
3,000+ $0.15 $0.15
9,000+ $0.13 $0.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS8884 Features

  • 30V drain-source voltage rating.
  • 8.5A continuous drain current capacity.
  • Low on-resistance of 23mΩ at 10V.
  • Fast switching with 9.2nC gate charge.
  • Surface-mount SOP-8 package.

FDS8884 Applications

  • DC/DC converter power stages.
  • Load switching and power management.
  • Synchronous rectification circuits.
  • Battery protection in portable devices.
  • Motherboard voltage regulator modules.

FDS8884 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the FDS8884?

The maximum drain-source voltage (Vds) is 30V, and the gate-source voltage (Vgs) is rated at ±20V.

What package is the FDS8884 available in?

The FDS8884 is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, also referred to as SOP-8.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDS8884 RoHS compliant?

The component is listed as RoHS3 Compliant, but this status is unverified. Please confirm with the manufacturer.

What is the continuous drain current rating?

The continuous drain current is 8.5A at 25°C ambient temperature.

What is the on-resistance at typical gate drive voltages?

Typical on-resistance is 19mΩ at Vgs=10V and Id=8.5A, and 23mΩ at Vgs=4.5V and Id=7.5A.

What is the gate threshold voltage range?

The gate threshold voltage ranges from 1.2V (minimum) to 2.5V (maximum), with a typical value of 1.7V at Vds=Vgs and Id=250µA.

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