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FDS8882 N-Channel MOSFET with 30V drain-source voltage, 9A continuous drain current, and low 20mΩ on-resistance. Packaged in 8-SOIC for surface mount applications.
Mfr Part #:

FDS8882

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 30V drain-source voltage, 9A continuous drain current, and low 20mΩ on-resistance. Packaged in 8-SOIC for surface mount applications.
✓ Total Stock: 64,950 pcs
$ Price Range: $0.23

FDS8882 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
64,950 pcs
On Request
64950 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS8882 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDS8882 Description

Short technical summary and product information.

The FDS8882 is an N-Channel MOSFET from ON Semiconductor designed for efficient power switching. It features a drain-source voltage rating of 30V and a continuous drain current of 9A at ambient temperature. The device offers a low on-resistance of 20mΩ maximum at 10V gate drive, enabling high efficiency in power management circuits.

 

Electrical characteristics include a gate threshold voltage of 3V maximum at 250µA drain current, and a gate charge of 20nC at 10V. Input capacitance is 940pF at 15V drain-source voltage. The MOSFET supports drive voltages of 4.5V and 10V, making it compatible with both logic-level and standard gate drive signals.

 

Thermally, the device can dissipate up to 2.5W at ambient temperature and operates over a junction temperature range of -55°C to 150°C. It is housed in an 8-SOIC surface mount package with a width of 3.90mm, suitable for compact PCB layouts.

FDS8882 Quick Information

Product Type: MOSFET
Canonical Name: FDS8882 N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDS8882 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDS8882 Estimated Pricing

Qty Low High
2,500+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS8882 Features

  • N-Channel MOSFET with 30V drain-source rating.
  • Continuous drain current of 9A at ambient temperature.
  • Low on-resistance of 20mΩ at 10V gate drive.
  • Surface mount package in 8-SOIC.
  • Operating temperature range -55°C to 150°C.

FDS8882 Applications

  • Power management in portable devices.
  • Load switching and distribution.
  • DC-DC converter circuits.
  • Battery protection and charging.

FDS8882 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS8882?

30V maximum.

What is the continuous drain current of the FDS8882?

9A at ambient temperature (Ta).

What is the on-resistance of the FDS8882?

20mΩ maximum at 9A drain current and 10V gate voltage.

What package is the FDS8882 available in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range of the FDS8882?

-55°C to 150°C (junction temperature).

Is the FDS8882 RoHS compliant?

RoHS3 compliant per existing database, but this is unverified.

What is the gate threshold voltage of the FDS8882?

3V maximum at 250µA drain current.

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