FDS8878-F123 The FDS8878-F123 is a 30V N-Channel PowerTrench MOSFET from On Semiconductor, rated for 10.2A continuous drain current and featuring low on-resistance of 14mΩ at 10V.
Mfr Part #:

FDS8878-F123

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS8878-F123 is a 30V N-Channel PowerTrench MOSFET from On Semiconductor, rated for 10.2A continuous drain current and featuring low on-resistance of 14mΩ at 10V.
✓ Total Stock: 10,000 pcs
$ Price Range: $0.17 - $0.41

FDS8878-F123 Available from 1 distributor

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✓ Non-Authorised
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FDS8878-F123 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Drain to Source Voltage (Vdss)
Industrial Grade
Lead Spacing
Lead Style
Medical Grade
Military Grade
Mounting Type
Storage Temperature
Tape & Reel
Termination Style

FDS8878-F123 Description

Short technical summary and product information.

The FDS8878-F123 is an N-Channel PowerTrench MOSFET from On Semiconductor designed for DC/DC converter applications. It features a maximum drain-to-source voltage of 30V and a continuous drain current of 10.2A at 25°C with VGS=10V. The device offers low on-resistance of 14mΩ at VGS=10V and 17mΩ at VGS=4.5V, enabling high efficiency in power conversion circuits.

 

This MOSFET is optimized for synchronous and conventional switching PWM controllers, providing low gate charge and fast switching speed. It is housed in an SOIC-8 (SO-8) surface-mount package with gull wing leads, suitable for automated assembly. The device is Pb-Free and RoHS compliant.

 

Key specifications include a maximum gate-to-source voltage of ±20V, pulsed drain current capability of 80A, and single pulse avalanche energy rating of 57mJ. The maximum power dissipation is 2.5W at 25°C ambient, with a junction-to-ambient thermal resistance of 50°C/W on a 1in² copper pad.

FDS8878-F123 Quick Information

Product Type: N-Channel MOSFET
Series: FDS8878
Canonical Name: FDS8878-F123 N-Channel PowerTrench MOSFET 30V 10.2A
Subcategory: Power MOSFET

FDS8878-F123 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Vendor Undefined
REACH Status: Non-Compliant
Lead Free: Yes

FDS8878-F123 Estimated Pricing

Qty Low High
727+ $0.41 $0.41
5,000+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS8878-F123 Features

  • 30V maximum drain-to-source voltage.
  • 10.2A continuous drain current capability.
  • 14mΩ on-resistance at VGS=10V.
  • SOIC-8 surface-mount package with gull wing leads.
  • Pb-Free and RoHS compliant.

FDS8878-F123 Applications

  • Ideal for DC/DC converter circuits.
  • Used in synchronous and switching PWM controllers.
  • Suitable for high-efficiency power management designs.
  • Applicable in portable and embedded systems.

FDS8878-F123 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDS8878-F123?

The maximum drain-to-source voltage (VDSS) is 30V.

What is the continuous drain current rating of the FDS8878-F123?

The continuous drain current is 10.2A at VGS=10V and TA=25°C, and 9.3A at VGS=4.5V and TA=25°C.

What is the on-resistance of the FDS8878-F123?

The on-resistance is 14mΩ at VGS=10V and ID=10.2A, and 17mΩ at VGS=4.5V and ID=9.3A.

What package does the FDS8878-F123 come in?

The FDS8878-F123 is housed in an SOIC-8 (SO-8) surface-mount package with gull wing leads.

Is the FDS8878-F123 RoHS compliant?

Yes, the device is Pb-Free and RoHS compliant as stated in the datasheet.

What is the maximum power dissipation of the FDS8878-F123?

The maximum power dissipation is 2.5W at TA=25°C.

What is the operating junction temperature range of the FDS8878-F123?

The operating junction temperature range is -55°C to +150°C.

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