| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
47,500 pcs
|
47500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
530 pcs
|
530 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
146 pcs
|
146 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS8878 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power switching applications. With a maximum drain-to-source voltage (Vdss) of 30V and a maximum continuous drain current of 10.2A, the device delivers robust performance in a compact 8-SOIC (SOIC-8) surface-mount package.
Key electrical characteristics include a maximum drain-source on-resistance of 14mΩ at Vgs=10V and Id=10.2A, and a maximum gate threshold voltage of 2.5V at Id=250µA. The device supports drive voltages of 4.5V and 10V, and features a maximum gate charge of 26nC at Vgs=10V, enabling efficient switching. Input capacitance (Ciss) is 897pF at Vds=15V.
The device is rated for operation over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W at ambient temperature. The MOSFET uses metal-oxide semiconductor technology and is suitable for load switching, DC-DC converters, and other power management circuits. Its surface-mount 8-SOIC package is ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.92 | $0.92 |
| 10+ | $0.58 | $0.58 |
| 100+ | $0.38 | $0.38 |
| 500+ | $0.29 | $0.29 |
| 1,000+ | $0.26 | $0.26 |
| 2,500+ | $0.23 | $0.23 |
| 5,000+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The FDS8878 is housed in a surface-mount 8-SOIC (0.154", 3.90mm width) package, with the supplier device package also designated as 8-SOIC.
The device operates over a junction temperature range of -55°C to 150°C.
Yes, the FDS8878 is listed as RoHS3 compliant.
The maximum gate charge (Qg) is 26nC at Vgs=10V.
The maximum drain-source on-resistance is 14mΩ at Vgs=10V and Id=10.2A.
The maximum gate threshold voltage is 2.5V at Id=250µA.