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FDS8876 N-Channel MOSFET, 30V drain-source voltage, 12.5A continuous drain current, 8.2mΩ on-resistance at 10V gate drive. Surface mount 8-SOIC package.
Mfr Part #:

FDS8876

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 30V drain-source voltage, 12.5A continuous drain current, 8.2mΩ on-resistance at 10V gate drive. Surface mount 8-SOIC package.
Total Stock: 2,439 pcs
$ Price Range: $0.70

FDS8876 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,439 pcs
2439 pcs On Request 1 On Request On Request 1249+ On Request On Request

FDS8876 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drain-to-source breakdown voltage
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Id (Maximum @ TA = 25 °C, VGS = 4.5 V, RθJA = 50 °C/W)
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Pulsed Drain Current
Rds On (Max) @ Id, Vgs
Rds(on) (Maximum @ VGS = 4.5 V, ID = 11.4 A)
RθJA (Maximum @ Minimum pad)
RθJA (Maximum @ Mounted on 1 in² pad of 2 oz copper)
SVHC Present
Single Pulse Avalanche Energy
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Thermal Resistance - Junction to Case
Vgs (Max)
Vgs(th) (Max) @ Id

FDS8876 Description

Short technical summary and product information.

The FDS8876 is an N-Channel MOSFET from onsemi, designed for DC/DC converters using synchronous or conventional PWM controllers. It features a maximum drain-source voltage of 30V and continuous drain current of 12.5A at 10V gate drive (11.4A at 4.5V).

 

The device offers low on-resistance of 8.2mΩ typical at 10V gate drive and 10.2mΩ at 4.5V. Gate threshold voltage is 2.5V maximum. Input capacitance is 1650pF at 15V VDS, and total gate charge is 36nC at 10V. The MOSFET can handle pulsed drain current up to 91A and single pulse avalanche energy of 105mJ.

 

The FDS8876 is housed in an 8-SOIC surface mount package with gull wing leads. Maximum power dissipation is 2.5W at 25°C ambient temperature. Operating junction temperature range is -55°C to 150°C. Thermal resistance junction-to-ambient is 50°C/W when mounted on a 1 in² pad of 2 oz copper, and 125°C/W on minimum pad.

 

Typical applications include DC/DC converters. The device is RoHS compliant and Pb-Free, as stated in the datasheet.

FDS8876 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel MOSFET, 30V, 12.5A, 8.2mΩ, 8-SOIC
Subcategory: Single

FDS8876 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDS8876 Estimated Pricing

Qty Low High
431+ $0.70 $0.70

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS8876 Features

  • 30V maximum drain-source voltage.
  • 12.5A continuous drain current at 10V gate drive.
  • Low on-resistance of 8.2mΩ at 10V.
  • Optimized for DC/DC converter applications.
  • Surface mount 8-SOIC package.

FDS8876 Applications

  • Improves efficiency in DC/DC converters.
  • Suitable for synchronous and PWM switching controllers.

FDS8876 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS8876?

30V.

What package is the FDS8876 available in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDS8876 RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free, as verified in the datasheet.

What is the continuous drain current of the FDS8876?

12.5A at 10V gate drive (11.4A at 4.5V) at 25°C ambient.

What is the on-resistance of the FDS8876?

8.2mΩ at 10V gate drive, 12.5A; 10.2mΩ at 4.5V, 11.4A.

What is the gate charge of the FDS8876?

36nC at 10V gate voltage.

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