| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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139,077 pcs
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139077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDS8870-NL is an N-Channel MOSFET manufactured by ON Semiconductor, specifically engineered to enhance the efficiency of DC/DC converters. This component is optimized for low gate charge, low on-resistance (RDS(on)), and fast switching speeds, making it suitable for synchronous or conventional switching PWM controllers.
Key electrical specifications include a breakdown voltage of 30V and a continuous drain current rating of 18A. The maximum on-resistance is rated at 4.2mΩ at a gate-source voltage of 10V, and 5mΩ at 4.5V. The threshold voltage is 1.7V, with a typical value of 2.5V at VGS=4.5V. Input capacitance is 4.615nF, with rise and fall times of 48ns and 21ns respectively.
This MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. It is housed in an 8-terminal SOIC package and is designed for surface mounting.
The FDS8870-NL is a reliable choice for power management applications requiring efficient and fast switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the FDS8870-NL is 30V.
The FDS8870-NL has a maximum continuous drain current rating of 18A.
The maximum on-resistance for the FDS8870-NL is 4.2mΩ.
The FDS8870-NL operates between -55°C and 150°C.
The FDS8870-NL is supplied in a SOIC package.
The FDS8870-NL is designed for surface mounting.