FDS8858CZ Dual N and P-Channel MOSFET array from On Semiconductor. Rated for 30V drain-source voltage with 8.6A (N-Channel) and 7.3A (P-Channel) continuous drain current.
Mfr Part #:

FDS8858CZ

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N and P-Channel MOSFET array from On Semiconductor. Rated for 30V drain-source voltage with 8.6A (N-Channel) and 7.3A (P-Channel) continuous drain current.
✓ Total Stock: 97,381 pcs
$ Price Range: $0.51 - $1.91

FDS8858CZ Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDS8858CZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDS8858CZ Description

Short technical summary and product information.

The FDS8858CZ is a dual N and P-Channel MOSFET array manufactured by On Semiconductor. It features a drain-source voltage rating of 30V and continuous drain currents of 8.6A for the N-Channel and 7.3A for the P-Channel. The device has a maximum on-resistance of 17mΩ at 8.6A and 10V gate drive. It is designed with logic level gate technology, allowing operation at lower gate voltages. The MOSFET is housed in an 8-SOIC surface mount package with a 3.90mm width. It operates over a temperature range of -55°C to 150°C. Typical applications include power management, load switching, and DC-DC converters where both N and P-Channel devices are needed.

FDS8858CZ Quick Information

Product Type: MOSFET Array
Series: PowerTrench
Canonical Name: FDS8858CZ - Dual N and P-Channel MOSFET, 30V, 8.6A/7.3A, 8-SOIC
Subcategory: N and P-Channel MOSFET

FDS8858CZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS8858CZ Estimated Pricing

Qty Low High
1+ $1.91 $1.91
10+ $0.85 $0.85
100+ $0.62 $0.62
500+ $0.51 $0.51
2,500+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS8858CZ Features

  • Dual N and P-Channel MOSFET in one package.
  • 30V drain-source voltage rating.
  • 8.6A N-Channel and 7.3A P-Channel current.
  • Low on-resistance of 17mΩ typical.
  • Logic level gate drive capability.

FDS8858CZ Applications

  • Power management in portable devices
  • DC-DC converter load switching
  • Battery protection circuits
  • Motor drive control applications
  • Logic-level gate drive switching

FDS8858CZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the package type?

8-SOIC surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDS8858CZ RoHS compliant?

RoHS3 Compliant (unverified).

What is the continuous drain current for N-Channel and P-Channel?

8.6A for N-Channel, 7.3A for P-Channel.

What is the on-resistance?

17mΩ maximum at 8.6A and 10V.

What is the gate threshold voltage?

3V maximum at 250µA.

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