| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4,657 pcs
|
4657 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,012 pcs
|
1012 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS8842NZ is an N-Channel MOSFET from ON Semiconductor in a surface-mount 8-SOIC package. It offers a drain-source voltage rating of 40V and continuous drain current of 14.9A at 25°C ambient temperature.
Electrical characteristics include a maximum on-resistance of 7mOhm at Vgs=10V and Id=14.9A. The gate threshold voltage is 3V maximum at Id=250µA. Input capacitance is 3845pF at Vds=15V, and total gate charge is 73nC at Vgs=10V. Drive voltage range is 4.5V to 10V.
The device operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W at 25°C ambient. The MOSFET is listed as RoHS3 compliant with MSL Level 1 (unlimited).
The drain-source breakdown voltage is 40V (minimum).
The maximum continuous drain current is 14.9A at 25°C ambient temperature.
The maximum on-resistance is 7 mOhm at Id=14.9A and Vgs=10V.
The junction temperature range is -55°C to 150°C.
The package is surface mount 8-SOIC (0.154", 3.90mm width).
Yes, it is listed as RoHS3 Compliant (unverified).