FDS8842NZ N-Channel MOSFET rated for 40V drain-source voltage and 14.9A continuous drain current. Features low on-resistance of 7mOhm at 10V gate drive.
Mfr Part #:

FDS8842NZ

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 40V drain-source voltage and 14.9A continuous drain current. Features low on-resistance of 7mOhm at 10V gate drive.
✓ Total Stock: 367,269 pcs

FDS8842NZ Available from 3 distributors

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361,600 pcs
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4,657 pcs
4657 pcs On Request 1 On Request On Request 21+ On Request On Request
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1,012 pcs
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FDS8842NZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS8842NZ Description

Short technical summary and product information.

The FDS8842NZ is an N-Channel MOSFET from ON Semiconductor in a surface-mount 8-SOIC package. It offers a drain-source voltage rating of 40V and continuous drain current of 14.9A at 25°C ambient temperature.

 

Electrical characteristics include a maximum on-resistance of 7mOhm at Vgs=10V and Id=14.9A. The gate threshold voltage is 3V maximum at Id=250µA. Input capacitance is 3845pF at Vds=15V, and total gate charge is 73nC at Vgs=10V. Drive voltage range is 4.5V to 10V.

 

The device operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W at 25°C ambient. The MOSFET is listed as RoHS3 compliant with MSL Level 1 (unlimited).

FDS8842NZ Quick Information

Product Type: MOSFET
Series: FDS8842NZ
Canonical Name: MOSFET N-Channel 40V 14.9A 8-SOIC
Subcategory: N-Channel MOSFET

FDS8842NZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDS8842NZ Features

  • N-Channel MOSFET with 40V drain-source rating.
  • Continuous drain current up to 14.9A.
  • Ultra-low on-resistance of 7 mOhm max.
  • Designed for 4.5V to 10V gate drive.
  • Surface mount 8-SOIC package.

FDS8842NZ Applications

  • Power switching in portable electronics.
  • DC-DC converter circuit applications.
  • Load management in embedded systems.

FDS8842NZ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS8842NZ?

The drain-source breakdown voltage is 40V (minimum).

What is the continuous drain current of the FDS8842NZ?

The maximum continuous drain current is 14.9A at 25°C ambient temperature.

What is the on-resistance (Rds(on)) of the FDS8842NZ?

The maximum on-resistance is 7 mOhm at Id=14.9A and Vgs=10V.

What is the operating temperature range of the FDS8842NZ?

The junction temperature range is -55°C to 150°C.

What is the package type of the FDS8842NZ?

The package is surface mount 8-SOIC (0.154", 3.90mm width).

Is the FDS8842NZ RoHS compliant?

Yes, it is listed as RoHS3 Compliant (unverified).

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