| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,000 pcs
|
25000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS8817NZ-G is an N-Channel PowerTrench MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power management applications requiring a 30V drain-source voltage and 15A continuous drain current. The device features a low on-resistance of 7mOhm at 10V gate drive, minimizing conduction losses.
This MOSFET utilizes advanced PowerTrench technology to achieve low gate charge (45nC) and low input capacitance (2400pF), enabling fast switching performance. The gate threshold voltage is 3V maximum at 250µA, and the device can be driven with logic-level voltages (4.5V) for reduced gate drive requirements.
The FDS8817NZ-G is housed in an industry-standard 8-SOIC surface-mount package with a 3.90mm width, suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1W at 25°C ambient. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1,500+ | $0.37 | $0.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
15A at 25°C ambient.
7mOhm maximum at 15A and 10V gate drive.
-55°C to 150°C (junction).
8-SOIC (0.154", 3.90mm Width).
Yes, RoHS3 compliant (unverified).
3V maximum at 250µA drain current.