FDS8817NZ N-Channel PowerTrench MOSFET, 30V Vds, 15A continuous drain current, ultra-low 7mΩ Rds(on) at 10V, in SOIC-8 surface mount package.
Mfr Part #:

FDS8817NZ

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel PowerTrench MOSFET, 30V Vds, 15A continuous drain current, ultra-low 7mΩ Rds(on) at 10V, in SOIC-8 surface mount package.
✓ Total Stock: 150,825 pcs

FDS8817NZ Available from 2 distributors

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✓ Non-Authorised
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Non-Authorised Inventory information
150,667 pcs
150667 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
158 pcs
158 pcs On Request 1 On Request On Request On Request On Request On Request

FDS8817NZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS8817NZ Description

Short technical summary and product information.

The FDS8817NZ is an N-Channel enhancement mode PowerTrench MOSFET produced by onsemi (formerly ON Semiconductor). It is designed for power management and load switching applications in notebook computers and portable battery packs. The device features a maximum drain-to-source voltage of 30V and a continuous drain current rating of 15A at 25°C ambient. Its ultra-low on-resistance of 7mΩ (max) at Vgs=10V and Id=15A minimizes conduction losses, and it also delivers 10mΩ max at 4.5V gate drive for lower voltage logic-level operation. The MOSFET includes a typical HBM ESD protection level of 3.8kV and a minimum single pulse avalanche energy rating of 181mJ, indicating robust ruggedness. It is housed in a standard SOIC-8 surface mount package (Case 751EB), making it suitable for compact PCB designs. The device is Pb-free and RoHS compliant, supporting lead-free manufacturing processes.

FDS8817NZ Quick Information

Product Type: MOSFET
Canonical Name: FDS8817NZ N-Channel PowerTrench MOSFET
Subcategory: Power MOSFET

FDS8817NZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDS8817NZ Features

  • 30V drain-source voltage rating.
  • 15A continuous drain current.
  • 7mΩ on-resistance at 10V gate drive.
  • ESD protection up to 3.8kV typical.
  • Pb-Free and RoHS compliant.

FDS8817NZ Applications

  • Power management in notebook computers.
  • Load switching in portable battery packs.
  • DC-DC converter and regulator circuits.
  • Battery protection and charging circuits.

FDS8817NZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS8817NZ?

The maximum drain-source voltage (Vds) is 30V.

What is the continuous drain current rating?

The continuous drain current is 15A at 25°C ambient temperature.

What is the on-resistance of the FDS8817NZ?

The Rds(on) is 7mΩ maximum at Vgs=10V, Id=15A; and 10mΩ maximum at Vgs=4.5V, Id=12.6A.

What package is the FDS8817NZ available in?

The device is supplied in an 8-SOIC (0.154", 3.90mm Width) surface mount package. The onsemi case code is 751EB.

Is the FDS8817NZ RoHS compliant?

Yes, the datasheet states the device is Pb-Free and RoHS compliant.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Does the FDS8817NZ have ESD protection?

Yes, the device features a typical HBM ESD protection level of 3.8kV.

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