| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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150,667 pcs
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150667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
158 pcs
|
158 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS8817NZ is an N-Channel enhancement mode PowerTrench MOSFET produced by onsemi (formerly ON Semiconductor). It is designed for power management and load switching applications in notebook computers and portable battery packs. The device features a maximum drain-to-source voltage of 30V and a continuous drain current rating of 15A at 25°C ambient. Its ultra-low on-resistance of 7mΩ (max) at Vgs=10V and Id=15A minimizes conduction losses, and it also delivers 10mΩ max at 4.5V gate drive for lower voltage logic-level operation. The MOSFET includes a typical HBM ESD protection level of 3.8kV and a minimum single pulse avalanche energy rating of 181mJ, indicating robust ruggedness. It is housed in a standard SOIC-8 surface mount package (Case 751EB), making it suitable for compact PCB designs. The device is Pb-free and RoHS compliant, supporting lead-free manufacturing processes.
The maximum drain-source voltage (Vds) is 30V.
The continuous drain current is 15A at 25°C ambient temperature.
The Rds(on) is 7mΩ maximum at Vgs=10V, Id=15A; and 10mΩ maximum at Vgs=4.5V, Id=12.6A.
The device is supplied in an 8-SOIC (0.154", 3.90mm Width) surface mount package. The onsemi case code is 751EB.
Yes, the datasheet states the device is Pb-Free and RoHS compliant.
The operating junction temperature range is -55°C to +150°C.
Yes, the device features a typical HBM ESD protection level of 3.8kV.