| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,573 pcs
|
8573 pcs | On Request | 1 | On Request | On Request | 15+/16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS8813NZ is an N-Channel power MOSFET from On Semiconductor, built with PowerTrench technology for efficient switching applications.
It is rated for a drain-to-source voltage of 30V and a continuous drain current of 18.5A at Ta. The maximum on-resistance is 4.5mΩ at Vgs=10V and Id=18.5A, enabling low conduction losses. The gate charge is 76nC maximum at Vgs=10V, and the input capacitance is 4145pF at Vds=15V.
The device is surface-mounted in an 8-SOIC package (0.154", 3.90mm width) and can operate over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W at Ta.
The maximum continuous drain current is 18.5A at Ta.
30V.
-55°C to 150°C (junction temperature).
8-SOIC (0.154", 3.90mm width) surface-mount package.
4.5mΩ at Vgs=10V, Id=18.5A.