FDS8812NZ FDS8812NZ is an N-Channel PowerTrench MOSFET rated for 30V drain-source voltage and 20A continuous current. It features low on-resistance of 4mOhm at 10V gate drive.
Mfr Part #:

FDS8812NZ

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS8812NZ is an N-Channel PowerTrench MOSFET rated for 30V drain-source voltage and 20A continuous current. It features low on-resistance of 4mOhm at 10V gate drive.
✓ Total Stock: 332,248 pcs
$ Price Range: $0.54 - $0.58

FDS8812NZ Available from 3 distributors

✓ Authorised
✓ Non-Authorised

FDS8812NZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS8812NZ Description

Short technical summary and product information.

The FDS8812NZ is an N-Channel MOSFET manufactured using Fairchild Semiconductor's advanced PowerTrench process (now part of On Semiconductor). This device is specifically designed for power management and load switching applications in notebook computers and portable battery packs. Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 20A (at 25°C ambient, Note 1a), and a low maximum on-resistance of 4.0mOhm at Vgs=10V, Id=20A (3.1mOhm typical). At lower gate drive voltage of 4.5V, the maximum on-resistance is 4.9mOhm (3.8mOhm typical). The device features ESD protection of 6.4kV typical (HBM). Gate threshold voltage is 3V maximum (1.8V typical). Input capacitance is 6925pF maximum at Vds=15V. Total gate charge is 126nC maximum at Vgs=10V. Switching speeds are characterized with turn-on delay time of 33ns maximum and rise time of 24ns maximum. The device can handle a single pulse avalanche energy of 661mJ maximum. The FDS8812NZ is housed in a surface-mount SOIC-8 package (8-SOIC, 0.154" width, 3.90mm width). It is supplied on 13" reels with 12mm tape width, 2500 units per reel. The operating junction temperature range is -55°C to 150°C. The device is RoHS3 compliant (unverified) and REACH unaffected (unverified).

FDS8812NZ Quick Information

Product Type: MOSFET – Single
Series: PowerTrench
Canonical Name: FDS8812NZ — N-Channel PowerTrench MOSFET 30V 20A
Subcategory: N-Channel MOSFET

FDS8812NZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS8812NZ Estimated Pricing

Qty Low High
2,500+ $0.58 $0.58
5,000+ $0.54 $0.54
7,500+ $0.54 $0.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS8812NZ Features

  • N-Channel PowerTrench MOSFET technology.
  • Rated for 30V drain-source voltage and 20A continuous current.
  • Low on-resistance of 4.0mOhm at 10V gate drive.
  • ESD protection of 6.4kV typical (HBM).
  • Surface-mount SOIC-8 package for compact designs.

FDS8812NZ Applications

  • Power management in notebook computers.
  • Load switching in portable battery packs.
  • DC-DC converter circuits.
  • General purpose low-voltage switching.
  • Battery protection circuits.

FDS8812NZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS8812NZ?

30V.

What is the package type of the FDS8812NZ?

8-SOIC (0.154", 3.90mm Width).

What is the operating temperature range of the FDS8812NZ?

-55°C to 150°C (junction).

Is the FDS8812NZ RoHS compliant?

RoHS3 Compliant (unverified).

What is the continuous drain current rating of the FDS8812NZ?

20A at 25°C ambient (Note 1a).

What is the typical on-resistance of the FDS8812NZ?

3.1mOhm typical at Vgs=10V, Id=20A; maximum 4.0mOhm.

What is the gate threshold voltage of the FDS8812NZ?

Maximum 3V at Id=250µA, typical 1.8V.

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