Mfr Part #:

FDS8672S

N-Channel MOSFET rated at 30V drain-source voltage and 18A continuous drain current. Features low on-resistance of 4.8mOhm at 10V gate drive.

✓ Total Stock: 1,414 pcs

$ Price Range: $1.18 - $2.65

FDS8672S Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	1,414 pcs On Request	1414 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDS8672S Description

Short technical summary and product information.

The FDS8672S is an N-Channel MOSFET from ON Semiconductor designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V device features a maximum continuous drain current of 18A (at 25°C) and a pulsed drain current of 80A. The drain-source on-resistance is as low as 4.8mOhm maximum at Vgs=10V, Id=18A and 7.0mOhm maximum at Vgs=4.5V, Id=15A. It integrates a monolithic SyncFET Schottky body diode using ON Semiconductor's patented technology. The gate threshold voltage ranges from 1.0V to 3.0V (typical 2.1V). Gate charge is 41nC maximum at Vgs=10V, and input capacitance is 2670pF at Vds=15V. The device is housed in an 8-SOIC package (Case 751EB) with surface mount mounting. Operating junction temperature range is -55°C to +150°C. Power dissipation is 2.5W at 25°C ambient. It is 100% tested for gate resistance. Typical applications include notebook Vcore low side switches, synchronous rectifiers for DC/DC converters, and point-of-load low side switches.

FDS8672S Quick Information

Product Type: N-Channel MOSFET

Series: FDS8672S

Canonical Name: N-Channel MOSFET, 30V, 18A, 8-SOIC

Subcategory: N-Channel MOSFET

FDS8672S Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL 1 - Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

FDS8672S Estimated Pricing

Qty	Low	High
1+	$2.65	$2.65
10+	$1.71	$1.71
100+	$1.18	$1.18

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS8672S Features

Low Rds(on) 4.8mOhm at 10V gate drive.
Integrates SyncFET Schottky body diode.
High pulsed current capability of 80A.
100% gate resistance tested for reliability.
Fast switching with high power handling.

FDS8672S Applications

Notebook Vcore low side switch.
Synchronous rectifier in DC/DC converters.
Point-of-load low side switch.

FDS8672S FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage (Vds) of FDS8672S?

30 V

What package is the FDS8672S available in?

8-SOIC (0.154", 3.90mm Width) surface mount package

What is the operating temperature range of the FDS8672S?

-55°C to +150°C (junction temperature)

Is the FDS8672S RoHS compliant?

Yes, RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free

What is the continuous drain current rating at 25°C?

18 A (continuous), 80 A (pulsed)

What is the typical gate threshold voltage (Vgs(th))?

2.1 V typical (1.0 V min, 3.0 V max)

What is the maximum on-resistance at Vgs=10V?

4.8 mOhm at Vgs=10V, Id=18A

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	18 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41 nC
Halogen Free	Yes
Industrial Grade	No
Input Capacitance (Ciss) (Max) @ Vds	2670 pF
Lead Style	Gull Wing
Medical Grade	No
Military Grade	No
Mounting Type	Surface Mount
Operating Temperature	-55°C to 150°C
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
SVHC Present	Not Present
Storage Temperature	-55.0°C ~ 150.0°C
Supplier Device Package	8-SOIC
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	1.0 V min, 2.1 V typ, 3.0 V max