| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,998 pcs
|
5998 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS86540 is an N-Channel enhancement-mode power MOSFET manufactured by onsemi. It is designed for high-efficiency power management applications requiring a 60V drain-source breakdown voltage and 18A continuous drain current capability. The device features a low typical on-resistance of 4.5mOhm at 10V gate drive, minimizing conduction losses.
This MOSFET utilizes advanced silicon technology to achieve fast switching performance, with a maximum gate charge of 90nC and input capacitance of 6410pF. It is suitable for DC-DC converters, motor control, and load switching applications where space is constrained.
The FDS86540 is offered in a standard 8-SOIC surface-mount package, enabling compact PCB layouts. It operates over a junction temperature range of -55°C to 150°C, making it robust for industrial and automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.58 | $4.58 |
| 10+ | $3.02 | $3.02 |
| 100+ | $2.13 | $2.13 |
| 2,500+ | $2.13 | $2.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current (Id) is 18A at ambient temperature (Ta).
The maximum on-resistance (Rds(on)) is 4.5mOhm at Id=18A and Vgs=10V.
The FDS86540 is available in an 8-SOIC surface-mount package (0.154" width, 3.90mm).
The operating junction temperature range is -55°C to 150°C.
The maximum gate charge (Qg) is 90nC at Vgs=10V.
The maximum input capacitance (Ciss) is 6410pF at Vds=30V.