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FDS86242 N-Channel MOSFET with 150V drain-source voltage and 4.1A continuous current. Features low Rds(on) of 67mOhm at 10V and is RoHS compliant.
Mfr Part #:

FDS86242

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 150V drain-source voltage and 4.1A continuous current. Features low Rds(on) of 67mOhm at 10V and is RoHS compliant.
✓ Total Stock: 171,002 pcs
$ Price Range: $0.46 - $1.42

FDS86242 Available from 6 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS86242 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDS86242 Description

Short technical summary and product information.

The FDS86242 is an N-Channel MOSFET from On Semiconductor, manufactured using the advanced POWERTRENCH process optimized for low on-resistance, fast switching, and ruggedness. It features a maximum drain-source voltage of 150V and continuous drain current of 4.1A at 25°C, with pulsed current capability up to 20A. The device offers a typical on-resistance of 56.3mOhm at VGS=10V and ID=4.1A, with a maximum of 67mOhm. It is 100% UIL tested for avalanche energy handling up to 40mJ and provides ESD protection (HBM >500V, CDM >2kV).

 

This MOSFET is suitable for DC/DC converters, off-line UPS, distributed power architectures, primary switches for 24V and 48V systems, and high voltage synchronous rectifiers. It is housed in a standard 8-SOIC surface mount package (0.154", 3.90mm width) with a junction-to-case thermal resistance of 25°C/W and junction-to-ambient of 50°C/W. The operating junction temperature range is -55°C to 150°C.

 

The FDS86242 is RoHS3 compliant, Pb-Free, and Halide Free, meeting environmental standards for modern electronic designs.

FDS86242 Quick Information

Product Type: MOSFET
Canonical Name: FDS86242 N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDS86242 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDS86242 Estimated Pricing

Qty Low High
1+ $1.42 $1.42
10+ $0.89 $0.89
100+ $0.59 $0.59
500+ $0.46 $0.46
2,500+ $0.46 $0.46

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS86242 Features

  • N-Channel MOSFET with 150V drain-source voltage.
  • Low Rds(on) of 67mOhm at 10V gate drive.
  • 100% UIL tested for avalanche ruggedness.
  • ESD protection: HBM >500V, CDM >2kV.
  • RoHS, Pb-Free, and Halide Free compliant.

FDS86242 Applications

  • Used in DC/DC converters and off-line UPS.
  • Ideal for distributed power architectures.
  • Primary switch for 24V and 48V systems.
  • High voltage synchronous rectifier applications.

FDS86242 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS86242?

150V.

What package is the FDS86242 available in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDS86242 RoHS compliant?

Yes, RoHS3 compliant, Pb-Free and Halide Free.

What is the continuous drain current rating?

4.1A at TA=25°C, with pulsed current up to 20A.

What is the typical on-resistance?

56.3mOhm typical at VGS=10V, ID=4.1A; maximum 67mOhm.

What is the gate charge of the FDS86242?

13nC maximum at VGS=10V.

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