| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,375 pcs
|
9375 pcs | On Request | 1 | On Request | On Request | 1613+ | On Request | On Request | |
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,793 pcs
|
1793 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
277 pcs
|
277 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS86240 is an N-Channel MOSFET manufactured by On Semiconductor using advanced POWERTRENCH Shielded Gate technology. This process is optimized for low on-resistance, high switching performance, and ruggedness. The device is 100% UIL tested and is Pb-Free, Halide Free, and RoHS compliant.
Key electrical specifications include a minimum drain-source breakdown voltage of 150V, continuous drain current of 7.5A at 25°C ambient, and pulsed drain current capability up to 199A. The maximum on-resistance is 19.8mΩ at VGS=10V and ID=7.5A, and 26mΩ at VGS=6V and ID=6.4A. Gate threshold voltage ranges from 2V to 4V. Total gate charge is 40nC maximum, and input capacitance is 2570pF maximum at VDS=75V. Single pulse avalanche energy rating is 220mJ.
The device is housed in an 8-SOIC surface mount package with a junction-to-case thermal resistance of 25°C/W and junction-to-ambient of 50°C/W. Operating junction temperature range is -55°C to 150°C. The MOSFET is supplied in tape and reel packaging with 2500 pieces per reel, suitable for automated assembly.
This MOSFET is designed for high-efficiency power conversion applications such as DC-DC converters, motor drives, and load switching where low conduction losses and high power density are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.45 | $4.45 |
| 10+ | $2.93 | $2.93 |
| 100+ | $2.07 | $2.07 |
| 500+ | $1.75 | $1.75 |
| 2,500+ | $1.75 | $1.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 150V.
The continuous drain current is 7.5A at 25°C ambient temperature.
The maximum on-resistance is 19.8mΩ at VGS=10V and ID=7.5A, and 26mΩ at VGS=6V and ID=6.4A.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-SOIC surface mount package.
Yes, the device is Pb-Free, Halide Free, and RoHS compliant.
The gate threshold voltage ranges from 2V to 4V at ID=250µA.