Mfr Part #:

FDS86106

N-Channel MOSFET with 100V drain-source voltage and 3.4A continuous drain current. Features 105mOhm max on-resistance at 10V gate drive in a surface-mount 8-SOIC package.

✓ Total Stock: 20,270 pcs

$ Price Range: $0.89 - $2.08

FDS86106 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	12,770 pcs On Request	12770 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	7,500 pcs On Request	7500 pcs	On Request	1	On Request	On Request	21+10+	On Request	On Request

FDS86106 Description

Short technical summary and product information.

The FDS86106 is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for switching applications requiring a 100V drain-source voltage rating and 3.4A continuous drain current. The device features a maximum on-resistance of 105mOhm at 10V gate drive and 3.4A drain current, with a gate threshold voltage of 4V maximum. The total gate charge is 4nC, and input capacitance is 208pF at 50V drain-source. The MOSFET is capable of handling up to 5W power dissipation at ambient temperature. It is housed in an 8-SOIC surface-mount package with a supplier device package of 8-SOIC, suitable for automated assembly. The operating temperature range is -55°C to 150°C junction temperature. This component is commonly used in DC-DC converters, load switches, and motor control circuits where efficient switching and compact size are required.

FDS86106 Quick Information

Product Type: MOSFET

Series: PowerTrench

Canonical Name: FDS86106 N-Channel MOSFET

Subcategory: Single MOSFET

FDS86106 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

FDS86106 Estimated Pricing

Qty	Low	High
1+	$2.08	$2.08
10+	$1.33	$1.33
100+	$0.89	$0.89
2,500+	$0.89	$0.89

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS86106 Features

N-Channel MOSFET with 100V drain-source voltage.
Continuous drain current rated at 3.4A.
Low on-resistance of 105mOhm maximum.
Surface-mount 8-SOIC package for compact designs.
Operating temperature range from -55°C to 150°C.

FDS86106 Applications

Used in DC-DC converter circuits.
Ideal for load switch applications.
Suitable for motor control in low-power systems.
Applied in battery protection circuits.

FDS86106 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating temperature range of the FDS86106?

The operating temperature range is -55°C to 150°C (junction).

What is the package type of the FDS86106?

The FDS86106 is available in an 8-SOIC surface-mount package (8-SOIC, 0.154" width, 3.90mm).

Is the FDS86106 RoHS compliant?

The FDS86106 is listed as RoHS3 compliant, though this status is unverified.

What is the drain-source voltage rating of the FDS86106?

100V.

What is the maximum gate threshold voltage?

4V at 250µA drain current.

What is the on-resistance of the FDS86106?

105mOhm maximum at 3.4A drain current and 10V gate drive.

What is the continuous drain current rating?

3.4A at 25°C ambient temperature.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	3.4 A (Ta)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	208 pF @ 50 V
Lead Spacing	1.27 mm
Lead Style	Gull Wing
Medical Grade	Yes
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	5 W (Ta)
Rds On (Max) @ Id, Vgs	105 mOhm @ 3.4 A, 10 V
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	8-SOIC
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V @ 250 µA